Semiconductor Active Area Layout to Prevent STI Structure Collapse
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in maintaining performance due to the shrinking size and complexity of integrated circuits, particularly in the fabrication of active areas, where the reduced width and pitch lead to limitations in the fabricating process, resulting in structural instability and potential collapse.
Innovation Solution
A method of fabricating semiconductor devices that includes a substrate with active structures and shallow trench isolations, featuring multiple active areas arranged in a specific pattern to enhance structural strength and stress distribution, where the second and third active areas are positioned outside the first active area, with edges aligned in specific directions to form a closed rectangular frame, thereby stabilizing the structure and preventing collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the width and pitch of active areas are reduced to meet miniaturization requirements, then the device size is reduced, but the structural stability deteriorates and fabricating process limitations increase
Solution Approach 1:
The active area is divided into multiple active area units arranged in parallel along the first direction. This segmentation allows the structure to maintain stability through distributed support while achieving miniaturization of the overall device footprint.
Solution Approach 2:
Multiple active area units are nested within a confined space, with the second and third active areas positioned outside the first active area. This nested arrangement maximizes the use of available space while maintaining structural integrity through the specific geometric configuration.
2Quantity of substance
If the pitch between active areas is reduced, then the device density is increased, but the fabricating process complexity increases and process limitations are encountered
Solution Approach 1:
The active areas are configured with asymmetric orientations where the second direction intersects and is not perpendicular to the first direction, and the second direction is perpendicular to the third direction. This asymmetric geometry optimizes space utilization and reduces fabrication complexity by avoiding symmetric constraints.
Solution Approach 2:
The active area units are extended along the first direction while their edges extend along second and third directions that are not perpendicular to each other. This multi-dimensional arrangement increases device density without proportionally increasing fabrication process complexity.
3Strength
If multiple active areas are arranged in a specific pattern with edges aligned in specific directions, then the structural strength is enhanced, but the device geometry complexity increases
Solution Approach 1:
The active areas are positioned at specific locations with specific orientations (second direction intersecting first direction at non-perpendicular angle, third direction perpendicular to second direction). This localized geometric configuration provides structural strength enhancement at critical positions without requiring complex geometry throughout the entire device.
Solution Approach 2:
The active areas are pre-configured in a specific geometric pattern during fabrication, with the second and third active areas positioned outside the first active area and edges aligned in specific directions. This preliminary structural arrangement prevents structural collapse before it can occur during subsequent processing or operation.
Data Source
AI summary
The present disclosure provides a method of fabricating a semiconductor device, which includes a substrate, an active structure, and a shallow trench isolation. The active structure is disposed in the substrate and includes a first active area, a second active area disposed outside the first active area, and a third active area disposed outside the second active area. The shallow trench isolation is disposed in the substrate to surround the active structure. Through the second active area and the third active of the active structure, the structural stability of the semiconductor device may be enhanced to improve the stress around the semiconductor device, thereby preventing from structural collapse or deformation.