Active Contact Barrier Structure for Diffusion-Resistant Semiconductors
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability and performance due to limitations in integration density and complexity, particularly in the design of active contacts and diffusion barrier layers, which affect the electrical characteristics and durability of the devices.
Innovation Solution
The semiconductor device incorporates a substrate with active patterns, gate electrodes, source/drain patterns, and active contacts that include a first contact with a barrier and conductive pattern, a diffusion barrier layer, and a second contact on the diffusion barrier layer, where the diffusion barrier layer is recessed to prevent metallic element diffusion and enhance reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-layer contact structure is used, then the manufacturing process is simpler, but metallic element diffusion occurs leading to reduced reliability
Solution Approach 1:
The contact structure is divided into multiple functional layers: a first contact layer with barrier pattern and conductive pattern, a diffusion barrier layer, and a second contact layer. This segmentation prevents metallic element diffusion while maintaining manufacturing feasibility through standardized layer-by-layer fabrication processes.
Solution Approach 2:
The diffusion barrier layer acts as an intermediary between the first contact and the second contact, preventing metallic elements from diffusing between these layers. This intermediary layer resolves the contradiction by adding a protective function without significantly complicating the overall manufacturing process.
2Productivity
If integration density is increased to improve device performance, then more functions are achieved, but manufacturing precision requirements increase
Solution Approach 1:
The contact structure employs local quality variations with different barrier patterns and conductive patterns in specific regions. This allows optimized electrical characteristics and diffusion prevention in high-density areas without requiring uniform high precision across the entire device, thus supporting higher integration density.
Solution Approach 2:
The contact structure extends into the vertical dimension with multiple layers (first contact, diffusion barrier layer, second contact), providing additional functional capability without increasing lateral footprint. This dimensional approach enables higher integration density while maintaining manageable manufacturing precision requirements.
3Reliability
If the contact hole is fully filled with conductive material, then electrical conductivity is improved, but metallic element diffusion increases
Solution Approach 1:
The diffusion barrier layer serves as an intermediary that blocks metallic element diffusion while allowing the contact hole to be filled with conductive material. This resolves the contradiction by providing a protective interface that maintains electrical conductivity without enabling harmful diffusion.
Solution Approach 2:
The contact structure uses composite material layers combining barrier materials and conductive materials in a stacked configuration. This composite approach enables both good electrical conductivity in the conductive regions and effective diffusion prevention at the material interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the electrical characteristics and reliability of the semiconductor device by preventing metallic element diffusion and enhancing the performance and durability of the active contacts, thereby addressing the limitations in integration density and complexity.
Implementation Method 1
a diffusion barrier layer on the first contact; and a second contact on the diffusion barrier layer
Data Source
AI summary
A semiconductor device including a substrate including an active pattern; a gate electrode crossing the active pattern and extending in a first direction; a source/drain pattern on the active pattern and adjacent to a side of the gate electrode; and an active contact in a contact hole on the source/drain pattern, wherein the active contact includes a first contact in a lower region of the contact hole, the first contact including a barrier pattern and a conductive pattern; a diffusion barrier layer on the first contact; and a second contact on the diffusion barrier layer, and a top surface of the diffusion barrier layer is coplanar with a top surface of the barrier pattern of the first contact.