Active Contact Sub-Contacts and Barrier Layer for Semiconductor Devices
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Solution Overview
Problem
The increasing demand for semiconductor devices with high reliability, high speed, and greater functionality has led to more complex structures, but existing technologies face challenges in efficiently forming active contacts that connect source/drain regions across gate electrodes without material diffusion and misalignment issues.
Innovation Solution
A semiconductor device design that includes an active contact with sub-contacts and a barrier layer to connect source/drain regions, using distinct patterning processes to ensure accurate alignment and prevent material diffusion, and a method for manufacturing this device by forming sub-contacts and a barrier layer to facilitate electrical connection between source/drain regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single patterning process is used to form the active contact, then the manufacturing process is simpler, but misalignment between the active contact and source/drain regions occurs
Solution Approach 1:
The patterning process is divided into two separate steps: first forming a preliminary pattern, then forming a final pattern. This segmentation allows each patterning step to be optimized independently, with the first pattern providing rough alignment and the second pattern achieving precise alignment with the source/drain regions, thereby resolving the contradiction between process simplicity and alignment precision.
2Device complexity
If no barrier layer is used, then the manufacturing process is simpler, but material diffusion occurs between contacts
Solution Approach 1:
A barrier layer is introduced as an intermediary component between the first contact and the second contact. This barrier layer serves as a mediator that prevents direct interaction and material diffusion between the two contacts while maintaining their electrical connection function, thus resolving the contradiction between structural simplicity and diffusion prevention.
3Reliability
If the active contact directly connects source/drain regions, then the electrical connection is achieved, but material diffusion compromises reliability
Solution Approach 1:
The barrier layer acts as an intermediary that enables the active contact to maintain electrical connection between source/drain regions while preventing harmful material diffusion. This intermediary structure ensures reliable electrical connectivity without compromising device reliability through diffusion, accepting increased structural complexity as necessary for achieving both electrical function and material stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively enhances the electrical connection between source/drain regions, improving the reliability and speed of semiconductor devices while minimizing material diffusion and misalignment, thus addressing the complexity and integration demands of modern semiconductor technology.
Implementation Method 1
a barrier layer provided between the second sub-contact and each of the first sub-contacts
Data Source
AI summary
The inventive concepts relate to a semiconductor device including a field effect transistor and a method for manufacturing the same. The semiconductor device includes a substrate including first and second source/drain regions formed thereon, a gate electrode intersecting the substrate between the first and second source/drain regions, and an active contact electrically connecting the first and second source/drain regions to each other. The active contact is spaced apart from the gate electrode. The active contact includes first sub-contacts provided on the first and second source/drain regions so as to be connected to the first and second source/drain regions, respectively, a second sub-contact provided on the first sub-contacts to electrically connect the first sub-contacts to each other, and a barrier layer provided between the second sub-contact and each of the first sub-contacts.