Active Interposer Layout for Compact 3D Memory-Logic Stacking
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Solution Overview
Problem
The increasing demand for high-performance, compact electronic components in portable devices necessitates the development of technologies that can reduce the size and weight of semiconductor components while integrating multiple components into a single package, which existing three-dimensional circuit routing schemes and through silicon via (TSV) technologies have not adequately addressed.
Innovation Solution
A semiconductor structure and manufacturing method that includes an active interposer with control circuits and communication circuits, vertically stacked DRAM and NAND flash memory chip modules, and a logic chip, utilizing through silicon vias and hybrid bonding processes to integrate multiple chips on a single package, with the logic chip and integrated memory chips bonded on an inactive interposer to minimize communication circuit lengths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If multiple semiconductor chips are integrated on a single package to meet increasing demand for high-performance components, then processing speed and functionality are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The semiconductor package is segmented into distinct functional modules: active interposer with control circuits for first stack chip module, active interposer with control circuits for second stack chip module, inactive interposer for logic chip mounting, and various buffer regions. This segmentation allows independent optimization of each module while maintaining overall system performance.
Solution Approach 2:
Active interposers serve as intermediary components between the logic chip and stack chip modules. These interposers contain control circuits that mediate communication and data flow, reducing the complexity of direct multi-chip interconnections while improving processing speed through dedicated control logic.
2Temperature
If three dimensional circuit routing schemes and TSV technology are used to connect upper and lower electronic devices, then vertical integration is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The package structure is divided into separate stacking regions (first stack chip module region, second stack chip module region) and logic chip region, with distinct interposer components for each. This segmentation simplifies the manufacturing process by allowing modular assembly rather than complex monolithic 3D routing.
Solution Approach 2:
The patent uses repeated patterns of interposer and stack chip module designs across different regions of the package. The active interposer structure with control circuits is replicated for both first and second stack chip modules, standardizing manufacturing processes and reducing complexity.
3Volume of moving object
If component size is reduced to meet demand for compact portable electronic devices, then portability is improved, but heat dissipation and signal integrity deteriorate
Solution Approach 1:
The patent transitions from planar 2D chip arrangements to 3D vertical stacking configurations. Stack chip modules are vertically stacked on the interposers, achieving higher integration density in the vertical dimension while maintaining signal integrity through controlled interconnection paths and dedicated control circuits.
Solution Approach 2:
Different regions of the package are optimized with specific local characteristics: active interposers with control circuits are placed in first and second control areas to manage signals for respective stack chip modules, while buffer regions provide isolation and thermal management. This local optimization maintains signal integrity despite reduced overall component size.
Data Source
AI summary
A semiconductor structure includes an active interposer, a first stack chip module and a second stack chip module. The active interposer includes a substrate, a first control circuit located in a first control area of the substrate, a second control circuit located in a second control area of the substrate, and a communication circuit connected between the first control circuit and the second control circuit. The first stack chip module is stacked vertically on the first control area of the active interposer and the second stack chip module is stacked vertically on the second control area of the active interposer. In addition, a semiconductor structure manufacturing method is also disclosed herein.