Active-Matrix Micro-LED Display Structure with Integrated Transistors
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Solution Overview
Problem
Current micro-LED display technologies face challenges in achieving high-resolution displays due to complex passive matrix circuits and difficulties in large-area uniformity and stability of oxide transistors.
Innovation Solution
An active-matrix inorganic light-emitting diode display device structure is developed, where each display pixel comprises a micro active inorganic light-emitting diode unit chip with a field-effect transistor, using the same materials for the active layer as the micro inorganic light-emitting diode, and a substrate with conductive wires formed by photolithography or printing, allowing for an arbitrarily curved surface and integration with sensor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If passive matrix display technology is used, then the display device can be manufactured with simpler processes, but the peripheral circuits become complex and high-resolution display is difficult to achieve
Solution Approach 1:
The patent combines the light-emitting diode and field-effect transistor into a single integrated unit chip, merging the display function with the driving circuit function. This integration eliminates the need for complex peripheral circuits while maintaining manufacturing simplicity, as the combined structure is transferred as a complete functional unit onto the substrate.
Solution Approach 2:
The unit chip serves multiple functions simultaneously: it acts as both the light-emitting element and the active matrix driving circuit. The field-effect transistor on the same chip controls the light-emitting diode, making the chip a multi-functional component that simplifies the overall display structure while enabling high-resolution displays.
2Productivity
If low-temperature polysilicon technology is used in organic electroluminescent displays, then the display can be manufactured, but large-area uniformity is difficult to achieve
Solution Approach 1:
The patent uses mass transfer technology to copy pre-fabricated unit chips (each containing a light-emitting diode and field-effect transistor) onto the display substrate. This copying approach ensures that each transferred chip is identical and pre-optimized, achieving large-area uniformity while maintaining high productivity through parallel transfer processes.
3Ease of manufacture
If oxide transistors are used, then the display device can be manufactured, but stability problems occur
Solution Approach 1:
The patent changes the material parameter of the transistor from oxide semiconductor to low-temperature polysilicon. This parameter change improves transistor stability and reliability while maintaining the ease of manufacture through existing low-temperature polysilicon fabrication processes, resolving the stability issues associated with oxide transistors.
4Stability of the object's composition
If rigid substrates are used, then the display structure is stable, but flexible and curved display applications are limited
Solution Approach 1:
The patent employs flexible thin-film substrates instead of rigid substrates, enabling the display to be bent into various shapes while maintaining structural integrity. The thin-film construction allows the entire display structure to be flexible, opening up applications for curved and wearable displays while preserving sufficient mechanical stability through proper substrate selection and design.
Data Source
AI summary
An arbitrary curved-surface display device which has unit display pixels including active inorganic micro-light emitting diode unit chips, wherein each active inorganic micro-light emitting diode unit chip comprises an inorganic light-emitting diode unit device and a field-effect transistor. Conducting wires are on a substrate of the arbitrary-curved surface, and the conducting wires connect to each active inorganic micro-light emitting diode unit chip.