Active Matrix Substrate with Selective Silicon Nitride Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing liquid crystal display devices face challenges in improving photopic contrast while minimizing device load, particularly due to the presence of silicon nitride films that increase internal reflection and require lengthy processing times for removal.
Innovation Solution
The active matrix substrate design includes a light transmitting portion where the silicon nitride layer of the interlayer film is removed, while maintaining a thin base coat layer, and the manufacturing method involves hydrogenating to repair semiconductor defects before selectively removing the silicon nitride layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the layered film is completely removed to improve transmittance, then photopic contrast is improved, but processing time increases and device load becomes extremely large
Solution Approach 1:
The patent divides the removal process into segments: only the interlayer film is removed while the base coat layer remains. This selective segmentation allows transmittance improvement in the light transmitting portion without requiring complete removal of all films, thereby reducing processing time and device load compared to complete removal approaches.
Solution Approach 2:
The patent applies local quality by removing the interlayer film specifically in the light transmitting portion while maintaining it in other regions. This localized removal approach improves transmittance where needed without the excessive processing burden of complete removal, balancing performance improvement with manufacturing efficiency.
2Illumination intensity
If the layered film is completely removed to improve transmittance, then photopic contrast is improved, but device load becomes extremely large
Solution Approach 1:
The patent segments the film structure into base coat layer and interlayer film, removing only the interlayer film in the light transmitting portion. This segmentation reduces device load by avoiding the complex processing required for complete removal of all films, while still achieving transmittance improvement.
Solution Approach 2:
The patent applies partial action by removing only the necessary interlayer film portion rather than the entire layered structure. This partial removal achieves the required transmittance improvement without the excessive device load associated with complete removal processes.
3Illumination intensity
If inorganic film is removed by etching to improve transmittance, then transmittance is improved, but distribution and residues affect transmittance quality
Solution Approach 1:
The patent extracts the interlayer film removal from the complete layered structure removal process. By focusing extraction only on the interlayer film in the light transmitting portion, the method achieves clean removal without the distribution and residue problems that occur when attempting to remove all films including organic layers through aggressive etching processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances photopic contrast by reducing internal reflection and shortens processing time, thereby reducing device load and improving transmittance without significant line width loss.
Implementation Method 1
hydrogenating of repairing defects in the semiconductor layer, using hydrogen supplied from the silicon nitride layer
Data Source
AI summary
An active matrix substrate includes a substrate, a TFT, a plurality of gate wiring lines, and a plurality of source wiring lines. A light transmitting portion is provided, the TFT, the gate wiring line, and the source wiring line not being disposed at the light transmitting portion. An interlayer film includes a silicon nitride layer formed of silicon nitride and a silicon oxide layer formed of silicon oxide. The interlayer film includes a first portion at the light transmitting portion, the first portion not including the silicon nitride layer.