Active Matrix Substrate Mono-Crystalline Layer Transfer
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Solution Overview
Problem
The manufacturing of active matrix substrates for organic light emitting display devices is complex and costly due to the numerous patterning processes required, particularly when using low-temperature crystallization methods, which reduces productivity and increases the likelihood of low-yield production.
Innovation Solution
A method that reduces the number of patterning processes by forming a semiconductor layer using a mono-crystalline silicon wafer, doping, and patterning with a minimal number of photo masks, and forming an active matrix substrate with a semiconductor layer of mono-crystalline material, thereby simplifying the manufacturing process and improving yield.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple patterning processes using photolithography are used to form the active matrix substrate, then the desired patterns can be formed, but manufacturing costs increase and productivity decreases
Solution Approach 1:
The patent combines multiple patterning steps into a single inkjet printing process. Instead of using sequential photolithography steps with multiple photo masks, the invention deposits patterned conductive layers, insulating layers, and semiconductor layers in one integrated printing operation, thereby reducing process complexity and improving productivity while maintaining pattern accuracy
Solution Approach 2:
The patent replaces the mechanical photolithography system (requiring photo masks, alignment mechanisms, and multiple exposure steps) with a digital inkjet printing system. This substitution eliminates the need for physical photo masks and complex alignment procedures, reducing manufacturing costs and increasing throughput while preserving the ability to form precise patterns
2Manufacturing precision
If multiple patterning processes are used, then complete device structures can be formed, but the overall process time increases
Solution Approach 1:
The patent implements continuous printing operations where conductive layers, insulating layers, and semiconductor layers are deposited sequentially without interrupting the manufacturing flow. This continuous action eliminates the downtime associated with multiple photolithography cycles, reducing total process time while ensuring complete device structure formation through systematic layer-by-layer construction
3Temperature
If low-temperature crystallization method is used for forming poly-silicon film, then the manufacturing process becomes more complex, but lower processing temperatures are achieved
Solution Approach 1:
The patent changes the material parameter from poly-silicon to organic semiconductor materials that can be deposited and processed at low temperatures through inkjet printing. This parameter change eliminates the need for low-temperature crystallization processes, reducing process complexity while maintaining the advantage of lower processing temperatures inherent to organic materials
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and increases productivity by simplifying the patterning process and improving the yield of active matrix substrates, while enabling the use of a semiconductor layer with improved characteristics for thin-film transistors.
Implementation Method 1
ion implanting a gas that includes hydrogen ions into a surface of the semiconductor wafer
Data Source
AI summary
A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the first insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.