Active Matrix Substrate Oxide Semiconductor Interlayer Corrosion Prevention
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Solution Overview
Problem
Active matrix substrates are prone to contact failure due to electrolytic corrosion between conductor films in different layers, which can occur within contact holes.
Innovation Solution
Incorporating an oxide semiconductor film converted into a conductor between the substrate and the first metal film, with this conductor film electrically connecting the first and second metal films through a contact hole in the interlayer insulating film, ensuring the films do not directly contact each other outside the hole, thereby reducing the risk of electrolytic corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If two conductor films are connected via a contact hole, then electrical connection is achieved, but electrolytic corrosion occurs causing contact failure
Solution Approach 1:
An oxide semiconductor film converted into a conductor is introduced as an intermediary material between the first and second conductor films. This intermediary layer prevents direct contact between the conductor films outside the contact hole, eliminating the galvanic couple that causes electrolytic corrosion, while still allowing electrical connection through the contact hole where the intermediary contacts the second conductor film.
2Device complexity
If conductor films are placed in different layers, then integration is achieved, but contact failure risk increases due to electrolytic corrosion
Solution Approach 1:
The oxide semiconductor film converted into a conductor serves as a protective intermediary between the first conductor film in the lower layer and the second conductor film in the upper layer. This intermediary prevents harmful direct contact while maintaining the layered structure's integration benefits and electrical connectivity through the contact hole.
3Ease of manufacture
If direct contact between conductor films is established, then electrical connection is simplified, but electrolytic corrosion occurs
Solution Approach 1:
The oxide semiconductor film converted into a conductor is introduced as a thin intermediary layer that does not significantly complicate the manufacturing process. It can be deposited using standard thin film deposition techniques, and the additional processing steps are minimal compared to the reliability improvement achieved by preventing electrolytic corrosion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly reduces the susceptibility to contact failure between conductor films, enhancing the reliability and durability of the active matrix substrate.
Implementation Method 1
An oxide semiconductor film converted into a conductor is provided in a layer between the substrate and the first metal film. Within the contact hole, the oxide semiconductor film converted into a conductor is in contact with the second metal film. Outside of the contact hole, the oxide semiconductor film converted into a conductor is in contact with the first metal film.
Data Source
AI summary
An active matrix substrate having low susceptibility to contact failure between two conductor films is provided. An oxide semiconductor film converted into a conductor is provided in a layer between a substrate and a first metal film. Within a contact hole, the oxide semiconductor film converted into a conductor is in contact with a second metal film. Outside of the contact hole, the oxide semiconductor film converted into a conductor is in contact with the first metal film.