Active Matrix Substrate With Split Switch Circuit For Narrow Bezel

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Solution Overview

Problem

Existing display devices with oxide semiconductor layered structures face challenges in achieving a narrow bezel and reduced power consumption, particularly when applied to active matrix substrates with gate drivers and analog switches for source line driving.

Innovation Solution

An active matrix substrate is designed with a pixel portion and a split switch circuit, utilizing TFTs with a dual-layer or triple-layer oxide semiconductor structure, where the second oxide semiconductor layer has higher carrier mobility than the third, and the third layer covers the upper and edge faces of the second layer, allowing for efficient signal distribution and reduced power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a TFT with a layered structure of multiple oxide semiconductor layers is used, then high field effect mobility is obtained, but it is difficult to satisfy requirements such as narrow bezel and reduced power consumption

Engineering Contradiction:
Improvefield effect mobilityVSAvoidlayered structure complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The oxide semiconductor layer is segmented into multiple sub-layers (first oxide semiconductor layer, second oxide semiconductor layer, third oxide semiconductor layer) with different carrier mobilities. This segmentation allows each layer to contribute differently to the overall transistor performance, achieving high field effect mobility through the combined effect while maintaining manageable structural complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the oxide semiconductor layer are assigned different local qualities (carrier mobilities). The first oxide semiconductor layer has higher carrier mobility than the third oxide semiconductor layer, creating a gradient structure that optimizes charge transport locally while contributing to overall high field effect mobility without requiring uniform high mobility throughout the entire structure.

Inventive Principle:
Principle #3Local quality

2Use of energy by stationary object

If a narrow bezel and reduced power consumption are achieved, then display device performance is improved, but existing oxide semiconductor layered structures cannot satisfy these requirements

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit configuration
Core Design Contradiction:
Use of energy by stationary objectVSDevice complexity

Solution Approach 1:

The source line driving function is segmented into multiple independent circuits (first analog switch circuit, second analog switch circuit, third analog switch circuit) that operate in parallel. This segmentation allows for more efficient current distribution and reduced overall power consumption while enabling a compact layout that achieves narrow bezel requirements.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The multiple analog switch circuits are designed to perform similar functions (source line driving) but with optimized characteristics for different regions. This multi-functionality approach allows the system to achieve reduced power consumption through optimized current paths while maintaining the compact structure needed for narrow bezel.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS10866475B2Active matrix substrate and display device
Publication Date: 2020.12.15 SHARP KK
  • US10866475B2 patent drawing
  • US10866475B2 patent drawing
  • US10866475B2 patent drawing

AI summary

An active matrix substrate according to an aspect of the disclosure includes a pixel portion including a plurality of gate lines and a plurality of source lines, and a plurality of pixel electrodes, and a split switch circuit configured to split a signal from a source driver to supply to the plurality of source lines, wherein the pixel portion includes a first TFT including a first oxide semiconductor layer, the split switch circuit includes a second TFT including a second oxide semiconductor layer and a third oxide semiconductor layer, and the third oxide semiconductor layer covers at least a portion of an upper face and a portion of an edge face of the second oxide semiconductor layer.