Active Matrix Substrate via Wafer Transfer for OLED Manufacturing
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Solution Overview
Problem
The manufacturing of active matrix substrates for organic light emitting display devices is complex and costly due to the need for numerous patterning processes and photo masks, leading to reduced productivity and increased particle generation.
Innovation Solution
A method involving reduced photo masks and patterning processes, where a semiconductor layer is formed using a mono-crystalline silicon wafer with ion implantation and resist layer doping, allowing for efficient formation of active layers and electrodes with fewer equipment and steps, thereby simplifying the substrate production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If numerous patterning processes and photo masks are used to form the active matrix substrate, then the manufacturing precision and circuit complexity are improved, but the device complexity and manufacturing cost increase significantly
Solution Approach 1:
The patent segments the manufacturing process into two distinct parts: (1) forming the insulating film pattern on the substrate using conventional photolithography, and (2) forming the semiconductor layer pattern by directly attaching and transferring a pre-patterned semiconductor wafer. This segmentation allows each part to be optimized independently, reducing overall process complexity while maintaining precision.
Solution Approach 2:
The semiconductor wafer is pre-patterned with the desired semiconductor layer configuration before attachment to the substrate. This preliminary action eliminates the need for multiple in-situ patterning steps, reducing manufacturing process complexity while ensuring precise circuit formation through the pre-defined wafer pattern.
2Adaptability or versatility
If multiple photo processes and photo masks are employed for CMOS formation, then the circuit functionality is improved, but the productivity decreases due to increased process time
Solution Approach 1:
The patent merges the semiconductor layer formation and patterning steps by directly attaching a pre-patterned semiconductor wafer to the substrate. This combining of operations eliminates multiple sequential photo processes, significantly reducing manufacturing time while maintaining full CMOS circuit functionality through the integrated wafer design.
Solution Approach 2:
The semiconductor wafer is prepared in advance with all necessary circuit patterns and structures before attachment. This preliminary action allows complex CMOS functionality to be achieved without requiring multiple time-consuming photo processes during the main manufacturing sequence, thereby improving productivity.
3Manufacturing precision
If conventional photolithography processes are used for each patterning step, then the pattern accuracy is improved, but the particle generation increases and productivity decreases
Solution Approach 1:
The patent extracts the semiconductor layer patterning process from the conventional in-situ photolithography sequence by using a pre-patterned semiconductor wafer. This extraction eliminates multiple photolithography steps that generate particles, while the critical pattern accuracy is maintained through the precision of the pre-formed wafer patterns.
Solution Approach 2:
The patent uses a copy of the desired semiconductor pattern that is already formed on the semiconductor wafer. This copying approach transfers the precise pattern directly to the substrate without requiring repeated photolithography exposure and development steps, thereby reducing particle generation while maintaining pattern accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs, increases productivity, and minimizes particle generation, resulting in improved yield and circuit performance with a mono-crystalline semiconductor material.
Implementation Method 1
ion implanting a gas that includes hydrogen ions into a surface of the semiconductor wafer
Data Source
AI summary
A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.