Active Pattern Air-Gap Layout to Reduce Parasitic Capacitance
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Solution Overview
Problem
As semiconductor elements shrink, dispersion characteristics deteriorate, affecting the reliability and stability of semiconductor devices.
Innovation Solution
Incorporating air gaps between active patterns and utilizing a specific layout of active patterns, word lines, back gate electrodes, and insulating patterns to enhance integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If element sizes are reduced to increase integration, then degree of integration is improved, but dispersion characteristics deteriorate
Solution Approach 1:
The patent introduces air gaps that segment the continuous conductive structures into isolated regions. These air gaps physically divide the bit line structure and word line structure, creating discrete electrical isolation zones that prevent signal interference between adjacent memory cells while maintaining high integration density.
Solution Approach 2:
The air gap acts as an intermediary medium between adjacent active patterns and conductive structures. This intermediate region provides electrical isolation and reduces parasitic capacitance, thereby improving signal integrity and reducing dispersion characteristics in highly integrated memory arrays.
2Quantity of substance
If element sizes are reduced to improve performance, then integration is improved, but parasitic capacitance increases
Solution Approach 1:
The patent extracts the harmful dielectric material and replaces it with air gaps between adjacent conductive structures. By removing the solid dielectric and substituting it with air (which has lower permittivity), the parasitic capacitance between bit lines and word lines is significantly reduced, improving memory device performance.
Solution Approach 2:
The patent changes the physical parameter of the insulating medium from solid dielectric material to air by creating void spaces. This parameter change from high-permittivity material to low-permittivity air directly reduces the parasitic capacitance value, enabling higher integration without the harmful effects of increased capacitance.
3Reliability
If air gaps are introduced to reduce parasitic capacitance, then performance is improved, but device complexity increases
Solution Approach 1:
The patent merges the formation of air gaps into the existing memory cell fabrication process by using the same spacer structures and etch processes that define the active patterns. The air gaps are created as a byproduct of the patterning process rather than requiring separate dedicated steps, thereby reducing the net increase in process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The air gaps reduce parasitic capacitance, improving the performance and reliability of semiconductor devices by suppressing degradation of cell transistors.
Implementation Method 1
The air gaps reduce parasitic capacitance, improving the performance and reliability of semiconductor devices by suppressing degradation of cell transistors.
Data Source
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AI summary
A semiconductor device includes active patterns (9) that include a first-first active pattern (9-1a), a second-first active pattern (9-2a), and a third-first active pattern (9-3a), a back gate electrode (21) extending between the first-first active pattern (9-1a) and the second-first active pattern (9-2a) and extending in the first direction (X), a first word line (33_1) and a second word line (33_2) extending between the second-first active pattern (9-2a) and the third-first active pattern (9-3a) and spaced apart from each other in the second direction (Y), an insulating pattern (37) between the first word line (33_1) and the second word line (33_2), a first air gap (87a) between the first-first active pattern (9-1a) and the second-first active pattern (9-2a), where the back gate electrode (21) is on the first air gap (87a), and a second air gap (87b) between the second-first active pattern (9-2a) and the third-first active pattern (9-3a), where the first word line (33_1), the second word line (33_2), and the insulating pattern (37) are on the second air gap (87b).