Active Pattern Structure With Segmented Isolation Trenches
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in forming active patterns with precise critical dimensions and spacings, leading to inaccuracies in the formation of trenches and isolation patterns, which affect the integration and performance of semiconductor devices.
Innovation Solution
The proposed solution involves creating an active pattern structure with a substrate that includes a plurality of trenches of different depths and widths between active patterns, where the trenches are filled with isolation patterns, allowing for precise arrangement and high integration of active patterns, enabling the formation of semiconductor devices with improved critical dimensions and spacings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If active patterns are spaced closely to achieve high integration, then device density increases, but manufacturing precision of trenches and isolation patterns deteriorates
Solution Approach 1:
The patent divides the isolation structure into multiple segments with different depths. First isolation patterns are formed to a first depth, then second isolation patterns are formed to a second depth greater than the first depth. This segmentation allows each isolation pattern to be optimized independently for its specific location, enabling precise control of trench dimensions even when active patterns are closely spaced for high integration.
Solution Approach 2:
Different regions of the substrate receive different isolation treatments. The patent forms isolation patterns with varying depths and widths at different locations between active patterns. Specifically, isolation patterns adjacent to active patterns have different dimensions than those in intermediate regions, allowing local optimization of manufacturing precision while maintaining overall high integration density.
2Productivity
If trenches are made narrower to increase active pattern density, then integration improves, but manufacturing precision of trench dimensions deteriorates
Solution Approach 1:
The trench isolation structure is segmented into multiple depth levels. First isolation patterns fill trenches to a first depth, and second isolation patterns extend to a second depth. This segmentation allows narrow trenches to be formed with high precision by controlling each depth level independently, rather than attempting to control the entire trench depth in a single step.
Solution Approach 2:
The patent introduces depth as an additional control dimension by forming isolation patterns at different depth levels. Instead of controlling only horizontal trench dimensions, the solution adds vertical dimensionality with multi-level isolation patterns, enabling precise control of narrow trench dimensions through depth-based differentiation.
Data Source
AI summary
An active pattern structure may include a substrate including an active pattern array defined by a plurality of trenches including first to third trenches, and first to third isolation patterns in the first to third trenches, respectively. The active pattern array may include a plurality of first and second active patterns extending in a first direction, and the first to third trenches may be between the first and second active patterns and may include different widths from each other. The active pattern array may include an active pattern group including one of the first active patterns and one of the second active patterns sequentially arranged in a second direction substantially perpendicular to the first direction. Each of the first and second active patterns may have a minute width.