Active Pattern Support Structure for Scaled MOSFET Reliability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The scaling down of metal-oxide-semiconductor field-effect transistors (MOSFETs) in semiconductor devices leads to deterioration in operational properties, necessitating improved reliability and fabrication methods to maintain performance.
Innovation Solution
A semiconductor device with trenches and stepwise active patterns, where a nitride layer fills second trenches with an oxide layer interposed between inner side surfaces and the nitride layer, and an upper oxide layer covers the structure to enhance reliability and prevent pattern bending or failure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If MOSFETs are scaled down to meet increasing demand for smaller pattern size, then pattern size is reduced, but operational properties deteriorate
Solution Approach 1:
The patent divides the trench structure into multiple segments with different widths (first trenches and second trenches having different widths) and fills them with different materials (oxide layer and nitride layer) to provide localized structural support and stress management, preventing pattern bending while maintaining small overall pattern size
Solution Approach 2:
The patent implements a nested structure where the oxide layer is interposed between the inner side surfaces of the trenches and the nitride layer, creating concentric layers within the trench structure that provide both mechanical support and electrical isolation at different levels
2Productivity
If MOSFETs are scaled down, then device density increases, but active patterns bend or fail
Solution Approach 1:
The patent applies different material properties at different locations within the trench structure - the oxide layer provides electrical isolation and mechanical support at the inner surfaces, while the nitride layer provides structural filling and stress distribution, creating localized quality variations that prevent pattern bending
Solution Approach 2:
The patent uses a composite structure combining oxide material and nitride material in a layered configuration within the trenches, where each material contributes its specific properties (electrical isolation, mechanical strength, stress distribution) to collectively prevent active pattern failure
Data Source
AI summary
Disclosed are a semiconductor device and a method of fabricating the same. In the semiconductor device, a supporting pattern may be used to fix upper portions of active patterns, when a gap-filling process is performed to fill a region between active patterns, and thus, it may be possible to prevent or reduce the likelihood of the active patterns from being bent or fallen. Thus, it may be possible to reduce failure of the semiconductor device and/or to improve reliability of the semiconductor device.