Active Pattern Width Layout for Integrated Circuit Performance
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Solution Overview
Problem
The development of semiconductor processes has led to the need for new design rules for integrated circuits with various structures, requiring efficient methods to design and manufacture integrated circuits with active patterns of different widths to optimize performance and efficiency.
Innovation Solution
The integration circuit design includes active patterns with varying widths in specific directions, allowing for the creation of integrated circuits with improved performance and reduced time and cost by optimizing the structure and placement of active patterns, such as FinFETs and GAAFETs, through the use of semiconductor processes that adjust the number and width of active patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If active patterns with various widths are used to optimize circuit performance, then productivity and performance are improved, but device complexity increases
Solution Approach 1:
The patent applies local quality by varying the widths of active patterns (e.g., FinFETs and GAAFETs) at different locations within the integrated circuit. Specifically, active patterns in different columns or regions are assigned different widths (e.g., W1, W2, W3) to optimize local circuit performance characteristics such as drive strength, speed, or power consumption, while maintaining a systematic approach through defined width ratios.
Solution Approach 2:
The patent segments the integrated circuit into multiple columns, each containing active patterns with specific width characteristics. This segmentation allows independent optimization of different circuit regions while maintaining overall system coherence through standardized width relationships between segments.
2Adaptability or versatility
If new devices and sub-processes are introduced to achieve various structures, then adaptability is improved, but ease of manufacture deteriorates
Solution Approach 1:
The patent achieves structural variety primarily by changing the width parameter of active patterns rather than introducing fundamentally new device types or sub-processes. The width of active patterns is varied according to predefined ratios (e.g., W1:W2:W3) to create different device characteristics, which simplifies the manufacturing process compared to introducing entirely new device structures.
Solution Approach 2:
The patent uses a universal active pattern structure (such as FinFET or GAAFET) that can serve multiple functions by simply adjusting its width parameter. This single versatile structure type can provide different drive strengths, speeds, and power characteristics, eliminating the need for multiple specialized device types and their associated manufacturing processes.
Data Source
AI summary
An integrated circuit comprising: a plurality of first gate electrodes extending in a second direction perpendicular to a first direction, wherein the plurality of first gate electrodes is in a first row that extends in the first direction; a first active pattern group comprising a plurality of first active patterns that extend in the first row in the first direction and intersecting the plurality of first gate electrodes; a plurality of second gate electrodes extending in the second direction in a second row that extends in the first direction; and a second active pattern group comprising a plurality of second active patterns extending in the second row in the first direction and intersecting the plurality of second gate electrodes, wherein ones of the plurality of first active patterns have different widths in the second direction, and the plurality of second active patterns have a first width in the second direction.