Semiconductor Active Region Layout With Bottom Isolation and Power Fin
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge of maintaining semiconductor device performance and reducing power consumption as sizes decrease is addressed by incorporating 3D integration techniques and extreme ultraviolet (EUV) lithography, which face limitations in interconnectivity and manufacturing efficiency.
Innovation Solution
The implementation of active regions with varying sizes and the use of a bottom isolation structure and power fin to facilitate compact design and efficient interconnectivity, along with transition cells to optimize cell placement and reduce spacing, enabling higher performance and lower power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor device size is decreased to maintain Moore's Law, then device density and integration are improved, but manufacturing precision and performance maintenance become more difficult
Solution Approach 1:
The patent applies local quality by implementing different active region sizes within the same semiconductor device. First active regions have a first size while second active regions have a second size different from the first. This allows different portions of the device to be optimized for different functions - some regions for high performance, others for low power consumption - thereby maintaining overall device performance while enabling higher density integration without requiring uniform miniaturization of all components
2Ease of manufacture
If uniform active region sizes are used, then manufacturing simplicity is maintained, but device performance optimization and power consumption reduction are limited
Solution Approach 1:
The patent implements local quality by creating first active regions with a first size and second active regions with a second size. This non-uniform approach allows specific regions to be optimized for different performance requirements while maintaining a relatively simple manufacturing process that can handle multiple region sizes within the same device structure, thus achieving both manufacturing feasibility and performance optimization
3Reliability
If larger active regions are used, then device performance is improved, but power consumption increases and device size increases
Solution Approach 1:
The patent applies local quality by implementing first active regions with a first size and second active regions with a second size different from the first. This enables high-performance regions to use larger active regions when performance is critical, while other regions use smaller active regions to minimize power consumption. The result is an optimized balance between performance and power consumption across the entire device, rather than requiring all regions to use uniformly large active regions
Solution Approach 2:
The patent segments the active regions into different size categories - first active regions with a first size and second active regions with a second size. This segmentation allows the device to distribute different functional requirements across different region sizes, enabling high-performance operations in specific segments while keeping other segments compact and low-power, thus achieving overall performance optimization without proportionally increasing total power consumption
Data Source
AI summary
A method of making a semiconductor device includes manufacturing active areas of a transistor over a substrate. The method further includes creating openings for source/drain regions (S/D regions) within the material of the active areas, wherein the openings expose the substrate. The method further includes manufacturing a bottom isolation structure within the openings for the S/D regions. The method further includes manufacturing the S/D regions over the bottom isolation structure within the openings. The method further includes manufacturing a contact opening extending into a trench isolation structure laterally spaced from the S/D regions. The method further includes depositing contact material within the contact opening. The method further includes exposing an end of the contact distal from the S/D regions.