Semiconductor Active Region Layout for Heat-Stable Current Handling
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Solution Overview
Problem
Existing semiconductor devices have limitations in current density and heat management, particularly in extended regions outside the terminal area, leading to suboptimal performance and increased temperature issues.
Innovation Solution
A semiconductor device configuration with a semiconductor substrate, protective film, and main electrodes, where the active region includes both overlapping and non-overlapping regions with a higher diode-formed region proportion in the non-overlapping area, allowing for enhanced heat dissipation and current handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the active region is extended outside the terminal area, then the current handling capability is improved, but the temperature increases and causes shutdown
Solution Approach 1:
The patent applies local quality by creating different regional configurations within the active region. The extended region outside the terminal area has a higher proportion of diode-formed regions compared to the overlapping region, optimizing local characteristics for heat management while maintaining current handling capability.
Solution Approach 2:
The active region is segmented into overlapping and non-overlapping regions with different diode-formed region proportions. This segmentation allows different areas to serve different functions - the overlapping region for current handling and the non-overlapping region for heat dissipation.
2Temperature
If the proportion of diode-formed region is increased in the non-overlapping area, then heat dissipation is improved, but the device complexity increases
Solution Approach 1:
The patent implements local quality by varying the proportion of diode-formed regions in different areas. The non-overlapping region has a higher proportion of diode-formed regions optimized for heat dissipation, while maintaining overall structural simplicity through a systematic regional approach.
3Temperature
If the overlapping region is reduced to increase non-overlapping region, then heat management improves, but the bonding region area decreases
Solution Approach 1:
The patent applies local quality by creating distinct regional configurations where the overlapping region maintains sufficient area for bonding while the non-overlapping region is optimized for heat dissipation through higher diode-formed region proportion, achieving both objectives simultaneously.
Solution Approach 2:
The active region is divided into overlapping and non-overlapping segments with different functional optimizations. This segmentation allows the bonding region to maintain adequate area while the extended non-overlapping region provides enhanced heat management capabilities.
Data Source
AI summary
In a semiconductor device, a protective film is disposed above a first surface of a semiconductor substrate. A first main electrode is disposed on the first surface of the semiconductor substrate and has an exposed portion exposed from an opening of the protective film. A second main electrode is disposed on a second surface of the semiconductor substrate. The semiconductor substrate includes an active region formed with IGBTs and diodes connected in antiparallel, as vertical elements. The opening of the protective film corresponds to the active region in a thickness direction. The active region includes an overlapping region overlapping with the exposed portion of the first main electrode, and a non-overlapping region without overlapping with the exposed portion in the thickness direction. A proportion of a diode-formed region in the non-overlapping region is higher than a proportion of a diode-formed region in the overlapping region.