Semiconductor Active Region Doping for Low-Current Quantum Efficiency
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Solution Overview
Problem
Current semiconductor light-emitting devices face challenges in achieving high quantum efficiency, particularly at low current densities and in miniaturized forms, due to limitations in dopant distribution and aluminum content in barrier and well layers.
Innovation Solution
The semiconductor device incorporates a specific dopant distribution and varying aluminum content in barrier and well layers, with a higher dopant concentration in the first semiconductor structure compared to the active region, and a reflective layer to enhance quantum efficiency and light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If uniform dopant distribution is used in semiconductor structures, then manufacturing simplicity is maintained, but quantum efficiency at low current densities deteriorates
Solution Approach 1:
The patent applies local quality by implementing non-uniform dopant distribution where the first dopant concentration in the first semiconductor structure is intentionally higher than in the active region. This localized variation in dopant concentration optimizes quantum efficiency at low current densities while maintaining manufacturing feasibility through controlled gradient doping profiles.
2Area of moving object
If device size is reduced for miniaturization, then integration density is improved, but quantum efficiency deteriorates
Solution Approach 1:
The patent applies parameter changes by modifying the dopant concentration parameter in the first semiconductor structure. By increasing the first dopant concentration above that of the active region, the device achieves enhanced quantum efficiency at low current densities that compensates for size reduction effects, allowing miniaturization without proportional loss in performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves internal and external quantum efficiency, especially at low current densities and in miniaturized devices, leading to enhanced light-emitting power and stability across different temperatures.
Implementation Method 1
The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant.
Implementation Method 2
The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure.
Data Source
AI summary
A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.