Active Region Isolation Layout for Critical Dimension Uniformity
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Solution Overview
Problem
The uniformity of critical dimensions of active regions in semiconductor devices degrades as feature sizes shrink, affecting the performance and integration of semiconductor devices.
Innovation Solution
A semiconductor device design and manufacturing method that includes first and second active structures with trenches and isolation structures to improve uniformity, featuring first and second active segments, a second active structure, and second isolation structures filled within trenches to enhance critical dimension uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes of semiconductor devices are scaled down to achieve miniaturization and high integration, then device density and integration are improved, but uniformity of critical dimensions of active regions degrades
Solution Approach 1:
The active region is segmented into multiple first active structures with first active segments and second active segments, separated by first isolation structures. This segmentation allows independent control and optimization of each segment's critical dimensions, improving overall uniformity while maintaining high integration density through compact arrangement of multiple segments
Solution Approach 2:
First isolation structures are introduced as intermediary elements between adjacent first active structures. These isolation structures act as buffers that prevent dimensional variations from propagating between neighboring active regions, thereby maintaining critical dimension uniformity across the device while enabling higher integration through increased device density
Data Source
AI summary
The present disclosure provides a semiconductor device and a manufacturing method for same. The semiconductor device includes a substrate provided with: a plurality of first active structures, a first isolation structure isolating each of the first active structures, a second active structure, and second isolation structures; where each of the plurality of first active structures extends along a first direction, and the plurality of first active structures include first active segments and second active segments; the second active structure is in direct contact with the second active segments, a plurality of first trenches are opened within the second active structure in an extension direction of the first active structures, and the first trenches are located between the second active segments and an active boundary; and the second isolation structures are filled within the first trenches.