Integrated Circuit Active Resistor Transistor Junction Noise Reduction

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Solution Overview

Problem

Semiconductor devices face noise issues due to metal wires connecting transistors and active resistors, which affect voltage levels and reliability, especially in systems like voltage dividers where noise can cause non-linearity in output voltages.

Innovation Solution

The integration circuit design removes metal wires by connecting transistors and active resistors through a single active region, eliminating the noise associated with metal lines and reducing the overall size of the circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If metal wires are used to connect transistors and active resistors, then electrical connection is achieved, but noise is generated affecting voltage levels

Engineering Contradiction:

Improvevoltage level stabilityVSAvoidnoise from metal wires

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The transistor and active resistor are merged into a single integrated structure where the transistor's source/drain region directly forms the active resistor. This eliminates the metal wire connection between separate components, thereby removing the noise source while maintaining electrical functionality.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The metal wire connection is extracted/removed from the circuit design. Instead of using separate metal interconnects to join the transistor and active resistor, the design directly integrates them through shared semiconductor regions, eliminating the harmful metal wire noise.

Inventive Principle:

Principle #2Taking out (Extraction)

2Productivity

If metal wires are used for connecting components, then electrical connectivity is provided, but circuit size increases

Engineering Contradiction:

Improvecircuit integration densityVSAvoidcircuit layout area

Core Design Contradiction:

ProductivityVSArea of stationary object

Solution Approach 1:

By merging the transistor and active resistor into one integrated structure with shared source/drain regions, the layout area is significantly reduced compared to separate components connected by metal wires. This increases integration density while maintaining all necessary electrical connections.

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If separate transistors and active resistors are used with metal wire connections, then component functionality is achieved, but noise causes non-linearity in voltage division

Engineering Contradiction:

Improvevoltage division linearityVSAvoidnoise from metal lines

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The integration of transistor and active resistor into a single structure eliminates metal wire connections that cause noise. This noise elimination ensures linear voltage division characteristics in divider circuits, improving reliability for precision voltage reference applications.

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentUS11545488B2Integrated circuit and semiconductor device including same

Publication Date: 2023.01.03 SAMSUNG ELECTRONICS CO LTD

AI summary

An integrated circuit includes; a substrate including a single active region, a first active resistor formed on the substrate, and a transistor including a first junction area in the single active region. The first active resistor and the transistor are electrically connected through the first junction area. The first active resistor is formed between a first node and a second node included in the first junction area. The first node is connected to a first contact, and the second node is connected to a second contact.