Active Switch Array Substrate Manufacturing via Inverted ITO Patterning
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Solution Overview
Problem
The traditional manufacturing process of active switch array substrates damages the passivation layer and channel, leading to poor quality thin film transistors due to sputtering and photolithography processes.
Innovation Solution
A method involving multiple photolithography processes to form a channel, source, and drain electrodes on a substrate with a molybdenum-aluminum or titanium-aluminum composite metal layer, using a semi-transparent conductive layer and a SiNx passivation layer to protect the channel, ensuring it is not subjected to damaging processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a passivation layer is formed on the channel first, then an ITO film is sputtered on the passivation layer, then the sputtering process damages the passivation layer, causing it to cannot protect the channel effectively, resulting in poor quality thin film transistors
Solution Approach 1:
The patent inverts the traditional sequence by forming the ITO film on the substrate first, then forming the channel and passivation layer on top of it. This reversal prevents the sputtering process from damaging the passivation layer, as the ITO is deposited before any damaging processes occur to the passivation structure.
Solution Approach 2:
The ITO film is prepared in advance on the substrate before the channel and passivation layer are formed. This preliminary positioning allows subsequent processes to proceed without damaging the passivation layer, as the ITO serves as a base layer that doesn't require post-deposition processing.
2Manufacturing precision
If photolithography process is used to treat the ITO film, then the passivation layer and channel are damaged, resulting in poor quality thin film transistors
Solution Approach 1:
The patent applies photolithography to the ITO film first to form precise patterns, then forms the passivation layer and channel subsequently. This inversion ensures that the photolithography process only affects the ITO layer, which can be removed or patterned without damaging the newly formed passivation layer and channel structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method results in better uniformity and stability of the channel, improving the quality of the active switch array substrate by avoiding direct exposure to damaging processes.
Implementation Method 1
an indium tin oxide (ITO) film is sputtered on the passivation layer. However, the sputtering process would damage the passivation layer
Implementation Method 2
the passivation layer is also prone to be damaged during a photolithography process for treating the ITO film
Implementation Method 3
after ultraviolet light passing through the binary mask, the ultraviolet light irradiating a first portion of the photo-resist film
Data Source
AI summary
The present disclosure provides a method for manufacturing an active switch array substrate, and the active switch array substrate, the method includes: providing a substrate; coating a first metal layer on the substrate; forming a gate electrode by treating the first metal layer; depositing an amorphous silicon layer on the substrate and the gate electrode; coating a second metal layer on the amorphous silicon layer; forming a patterned second metal layer; coating a passivation layer on the patterned second metal layer; forming a through hole in the passivation layer; coating a light permeability conductive layer on the passivation layer; and carrying out a fourth photolithography process to the light permeability conductive layer, the passivation layer, and the patterned second metal layer, to form a channel, a source electrode, and a drain electrode on the light permeability conductive layer, the passivation layer, and the patterned second metal layer.