Acute-Angle Flash Memory Structure for Faster Electric Field Coupling
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Solution Overview
Problem
Semiconductor memory devices, particularly non-volatile flash memory, face challenges in miniaturization and performance enhancement without increasing process costs, and there is a need to accelerate operation speed.
Innovation Solution
A semiconductor structure with an acute angle is designed, featuring a high electric field at the tip of the acute angle to facilitate faster signal transmission between conductive elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional flash structure is used, then manufacturing process is simple, but operation speed is slow due to low electric field at corners
Solution Approach 1:
The patent applies asymmetry by changing the conventional rectangular conductive element shape to an acute angle shape. The acute angle structure creates a tip region where electric field lines concentrate, generating a significantly higher electric field strength compared to the corners of rectangular structures. This asymmetric geometry directly addresses the slow operation speed issue by enhancing charge injection efficiency during programming and erasing operations.
Solution Approach 2:
The patent implements local quality by creating a specific acute angle tip region on the conductive element where the electric field concentration occurs. Rather than uniformly modifying the entire structure, the acute angle geometry locally concentrates the electric field at the tip, which is precisely where charge injection into the floating gate is most effective. This localized enhancement improves operation speed without requiring complex modifications throughout the entire flash structure.
2Volume of moving object
If miniaturization is pursued, then memory capacity increases, but electric field strength decreases leading to slower operation
Solution Approach 1:
The patent applies parameter changes by modifying the geometric parameters of the conductive element from a conventional rectangular shape to an acute angle shape. This geometric parameter change fundamentally alters the electric field distribution, creating a concentration effect at the acute angle tip. Even as the overall memory unit size is reduced for miniaturization, the acute angle geometry ensures that the electric field strength at the critical tip region remains sufficiently high to maintain fast operation speeds.
Solution Approach 2:
While not directly applying spheroidality, the patent uses a complementary geometric principle by avoiding sharp corners (90-degree angles) and instead employing an acute angle with a specific tip geometry. This curved or rounded tip at the acute angle prevents electric field singularities while still maintaining strong field concentration, enabling the structure to function effectively at miniaturized dimensions without sacrificing operation speed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The acute angle structure enhances the operation speed of flash memory by concentrating the electric field, allowing for quicker signal transmission.
Implementation Method 1
a higher electric field at the tip of the acute angle is formed at the flash
Data Source
AI summary
A semiconductor structure with an acute angle includes a semiconductor substrate. A first isolation layer covers and contacts the semiconductor substrate. A first conductive element is disposed on the first isolation layer. The first conductive element includes a bottom surface and a sidewall. The bottom surface contacts the first isolation layer. An acute angle is formed between the bottom surface and the sidewall, and the acute angle has a tip. A second conductive element is disposed on one side of the first conductive element, wherein the tip pointing toward the second conductive element. An extension surface extends from the bottom surface of the first conductive element, and the extension surface intersects with the second conductive element. A second isolation layer sandwiched between the first conductive element and the second conductive element.