Adamantine Semiconductor Composition for Non-Toxic Solar Efficiency
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Solution Overview
Problem
Current photovoltaic technologies face challenges in achieving high efficiency and cost-effectiveness, with limited semiconductor materials offering both high performance and non-toxicity, particularly as demand for solar cell efficiency surpasses 20% and toxicity regulations tighten.
Innovation Solution
Development of adamantine semiconductors comprising group 0B elements and other elements from groups I, II, III, IV, V, VI, and VII, with specific structures such as 0-II-VII2, 0-III-VII3, and 0-IV-VI2, utilizing abundant and non-toxic materials like Ni, Si, and S, and forming methods involving annealing to create ternary, quaternary, or quinternary families, which are free from toxic elements like Cd and Pb.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional semiconductor materials (Si, GaAs, InP, GaInP, CIGS, CdTe, Pb-halide perovskites) are used to achieve high efficiency (>20%), then photovoltaic performance is improved, but toxicity and environmental harm increase due to the use of Cd, Pb and other harmful elements
Solution Approach 1:
The patent changes the chemical composition parameters by replacing toxic elements (Cd, Pb) with non-toxic alternatives (Ni, Co, Fe, Mn, Zn, Cu) while maintaining the adamantine crystal structure. This substitution achieves the desired photovoltaic efficiency without the harmful effects of conventional materials.
Solution Approach 2:
The patent employs composite semiconductor materials with specific stoichiometric ratios (e.g., ABX3, A2BX4, A3BX6 families) combining non-toxic metal elements with chalcogen or halogen elements. These composite structures achieve high efficiency through optimized bandgaps while eliminating toxicity concerns.
2Ease of manufacture
If abundant and non-toxic materials are used to reduce cost and environmental impact, then manufacturing cost and environmental harm are reduced, but achieving high efficiency (>20%) becomes more difficult
Solution Approach 1:
The patent optimizes compositional parameters (stoichiometric ratios of A, B, and X elements) and structural parameters (crystal phase, grain size) of abundant materials to achieve high efficiency. By precisely controlling these parameters, the patent enables non-toxic, abundant materials to reach >20% photovoltaic efficiency.
Solution Approach 2:
The patent introduces local compositional variations and defect engineering within the crystal structure to enhance carrier transport and reduce recombination losses. This local optimization allows abundant materials to achieve performance levels previously only attainable with rare or toxic elements.
3Object-affected harmful factors
If strict toxicity regulations are implemented to protect environment and health, then environmental safety is improved, but material selection and manufacturing flexibility are reduced
Solution Approach 1:
The patent identifies a universal adamantine crystal structure that can accommodate multiple different element combinations (Ni, Co, Fe, Mn, Zn, Cu with S, Se, Te, I, Br). This universal structure provides material selection flexibility while ensuring all variants meet environmental safety requirements by being free from toxic Cd and Pb.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These semiconductors offer potential for solar cell efficiencies exceeding 25% with reduced costs and environmental impact, leveraging abundant, non-toxic materials and novel structures that enhance tolerance to defects, enabling scalable and cost-effective solar cell production.
Implementation Method 1
Improved efficiency has been an important contributor to recently reduced photovoltaic costs
Implementation Method 2
forming methods involving annealing to create ternary, quaternary, or quinternary families
Data Source
AI summary
Disclosed is an adamantine semiconductor. The semiconductor comprises a first element being from one of the following groups: VIII, VII, VI, V, IV, III, II, Ī or 0. The semiconductor also comprises at least two other elements, the at least two other elements being from group I, II, III, IV, V, VI and/or VII. The first element being from group VIII, VII, VI, V, IV, III, II, Ī or 0 includes an element not formally being from group VIII, VII, VI, V, IV, III, II, Ī or 0 but is known to assume the same oxidation state as the elements that do lie in these groups. The at least two other elements from group I, II, III, IV, V, VI and/or VII includes elements not formally being from group I, II, III, IV, V, VI and/or VII but are known to assume the same oxidation state as the elements that do lie in these groups.