Adaptive Body Bias Generator for Memory Devices

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Solution Overview

Problem

Existing memory devices lack an adaptive mechanism to dynamically adjust body biases based on environmental factors like frequency and temperature, which affects performance and power consumption.

Innovation Solution

A memory device with an adaptive body bias generator that applies forward or reverse body biases to speed and leakage paths based on detected frequency and temperature information, optimizing bias voltages to improve performance and reduce power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a fixed body bias is applied to the memory device, then the circuit behavior is stable, but the performance and power consumption cannot be optimized under varying environmental conditions

Engineering Contradiction:
Improveadaptability to environmental conditionsVSAvoidcomplexity of bias control mechanism
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent implements dynamic body bias adjustment by transitioning from a fixed bias mechanism to an adaptive mechanism that automatically modifies bias voltages based on detected frequency and temperature conditions. The adaptive body bias generator dynamically selects and applies appropriate bias voltages to different circuits (speed path and leakage path) according to real-time environmental parameters, enabling the system to adapt its behavior without manual intervention.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the bias voltage parameters dynamically based on environmental conditions. Different body bias voltages (first and second forward/reverse biases) are applied to different circuits depending on the detected frequency and temperature. This parameter adjustment allows optimization of threshold voltages to balance performance and power consumption under varying operating conditions.

Inventive Principle:
Principle #35Parameter changes

2Speed

If forward body bias is applied to increase transistor speed, then the threshold voltage decreases and switching speed improves, but power consumption increases

Engineering Contradiction:
Improvetransistor switching speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies different body bias strategies to different circuits based on their functional requirements. The speed path circuit receives forward body bias to enhance switching speed when performance is critical, while the leakage path circuit receives reverse body bias to minimize power consumption when speed is less critical. This localized differentiation allows each circuit to operate optimally for its specific function.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent dynamically adjusts the body bias applied to circuits based on detected environmental conditions such as frequency and temperature. The adaptive body bias generator selectively applies forward or reverse bias to different circuits depending on the operating context, enabling the system to optimize the trade-off between speed and power consumption in real-time based on actual performance requirements and environmental factors.

Inventive Principle:
Principle #15Dynamics

3Loss of energy

If reverse body bias is applied to reduce leakage current, then the threshold voltage increases and power consumption decreases, but the transistor switching speed reduces

Engineering Contradiction:
Improveleakage currentVSAvoidtransistor switching speed
Core Design Contradiction:
Loss of energyVSSpeed

Solution Approach 1:

The patent applies reverse body bias specifically to the leakage path circuit to minimize leakage current and reduce power consumption, while applying forward body bias to the speed path circuit to maintain high switching speed. This spatial differentiation of bias strategies ensures that power-saving measures are applied where they are most beneficial without compromising the performance of speed-critical circuits.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent dynamically selects whether to apply reverse body bias to circuits based on detected environmental conditions and operational context. The adaptive body bias generator monitors frequency and temperature and adjusts the bias application accordingly, applying reverse bias during low-performance modes to reduce leakage while switching to forward bias when high speed is required, thus dynamically optimizing the leakage-speed trade-off.

Inventive Principle:
Principle #15Dynamics

4Productivity

If adaptive body bias adjustment is implemented, then performance and power consumption are optimized under varying conditions, but the device complexity increases

Engineering Contradiction:
Improveoperational efficiencyVSAvoidcomplexity of bias control system
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent implements feedback mechanisms through frequency detectors and temperature detectors that continuously monitor environmental conditions and provide input to the adaptive body bias generator. This feedback loop enables the system to automatically adjust body bias voltages based on real-time detection of frequency and temperature, optimizing performance and power consumption without requiring complex manual control or external intervention.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The adaptive body bias generator autonomously adjusts the body bias voltages applied to different circuits based on environmental conditions detected by integrated sensors. The system serves itself by automatically selecting and applying appropriate bias voltages without external control, thereby optimizing operational efficiency while minimizing the complexity of external control mechanisms.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS11551729B2Memory device and an operating method thereof
Publication Date: 2023.01.10 SAMSUNG ELECTRONICS CO LTD
  • US11551729B2 patent drawing
  • US11551729B2 patent drawing
  • US11551729B2 patent drawing

AI summary

A memory device includes: a first circuit; a second circuit; and an adaptive body bias generator configured to receive frequency detection information or temperature detection information, to apply a first forward body bias or a first reverse body bias to the first circuit in response to the frequency detection information or the temperature detection information, and to apply a second forward body bias or a second reverse body bias to the second circuit in response to the frequency detection information or the temperature detection information.