Adaptive DC-DC Converter Power Stage for Wide Voltage Range

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Solution Overview

Problem

DC-to-DC converters face challenges in operating efficiently across a wide range of voltage levels, particularly when transitioning from two AA cells to a single AA cell, due to high threshold voltages of traditional power transistors, which affects reliability and conduction.

Innovation Solution

A power stage configuration using a high-side n-channel transistor, a high-side p-channel transistor, and a low-side n-channel transistor, with a gate controller determining which transistor to activate based on the power supply voltage, allowing for effective switching across varying voltage levels by selecting the appropriate high-side transistor based on the supply voltage threshold.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If high-voltage transistors are used for 2AA cell power supply, then reliability is improved, but conduction capability deteriorates due to high threshold voltages

Engineering Contradiction:
ImprovereliabilityVSAvoidconduction capability
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent applies dynamics by making the transistor configuration adaptive rather than fixed. The system dynamically selects between different high-side transistor configurations (first configuration with first high-side transistor, second configuration with second high-side transistor) based on the detected power supply voltage level. This allows the same power stage to optimize its transistor selection in real-time, ensuring reliable operation across both 1AA and 2AA cell voltage ranges without being constrained by a single fixed transistor design

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the operational parameters by detecting the power supply voltage level and adjusting which transistor configuration is active. When the voltage indicates a 1AA cell (lower voltage range), one transistor configuration is selected; when the voltage indicates a 2AA cell (higher voltage range), a different transistor configuration is selected. This parameter-based adaptation resolves the contradiction by matching transistor characteristics to the actual operating voltage conditions

Inventive Principle:
Principle #35Parameter changes

2Ease of operation

If low-voltage transistors are used for 1AA cell voltage levels, then conduction capability is improved, but reliability deteriorates when used with 2AA cells

Engineering Contradiction:
Improveconduction capabilityVSAvoidreliability
Core Design Contradiction:
Ease of operationVSReliability

Solution Approach 1:

The system dynamically adjusts its transistor configuration based on the detected power supply voltage. Instead of using a fixed low-voltage transistor design that would compromise reliability at higher voltages, the system switches between different high-side transistor configurations. When operating from a 2AA cell, the system selects the transistor configuration appropriate for higher voltage operation, thereby maintaining reliability while still supporting 1AA cell operation when needed

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements universality by designing a power stage that can reliably handle both 1AA and 2AA cell power supplies through selective transistor configuration. The power stage is not dedicated to a single voltage range but is designed to adapt its transistor selection based on the power source being used, making it universally compatible with different battery configurations while maintaining both conduction capability and reliability across the full voltage range

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Device complexity

If a fixed transistor configuration is used, then device complexity is reduced, but adaptability to different voltage ranges deteriorates

Engineering Contradiction:
Improvedevice complexityVSAvoidadaptability
Core Design Contradiction:
Device complexityVSAdaptability or versatility

Solution Approach 1:

The patent applies dynamics by implementing a voltage detection mechanism that automatically selects the appropriate high-side transistor configuration based on the power supply voltage level. This dynamic selection process allows the power stage to adapt to different voltage ranges (1AA vs 2AA cells) without requiring manual intervention or complex external circuitry. The system remains relatively simple in structure but gains adaptability through intelligent, voltage-based configuration selection

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The power stage employs self-service by using its own power supply voltage as the basis for automatic configuration selection. The voltage detection circuit monitors the input voltage and autonomously determines which transistor configuration should be active, eliminating the need for external control signals or complex management circuits. This self-configuring capability achieves adaptability while keeping the overall device complexity low

Inventive Principle:
Principle #25Self-service

Data Source

PatentEP3459167B1Power stage for a DC-DC converter
Publication Date: 2021.09.08 TEXAS INSTRUMENTS INC
  • EP3459167B1 patent drawingFigure 1~2
  • EP3459167B1 patent drawingFigure 3~4
  • EP3459167B1 patent drawingFigure 5

AI summary

In described examples, a power stage for a DC-to-DC voltage converter (200) includes a voltage input, a high-side n-channel transistor (210), a high-side p-channel transistor (215), and a low-side n-channel transistor (220). The voltage input is couplable to a supply voltage (205). A drain terminal of the high-side n-channel transistor (210) is coupled to the voltage input, and a source terminal of the high-side n-channel transistor (210) is coupled to a first node that is couplable to an output stage of the DC-to-DC converter (200). A source terminal of the high-side p-channel transistor (215) is coupled to the voltage input, and a drain terminal of the high-side p-channel transistor (215) is coupled to the first node. A drain terminal of the low-side n-channel transistor (220) is coupled to the first node, and a source terminal of the low-side n-channel transistor (220) is coupled to a ground.