Adaptive Divisional Programming for Phase Change Random Access Memory

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Solution Overview

Problem

Conventional PRAM devices are unable to simultaneously program multiple phase change memory cells due to current limitations, requiring divisional program operations that are inefficient and time-consuming, leading to unnecessary current consumption and programming failures.

Innovation Solution

A method and device for PRAM that adaptively perform divisional program operations by identifying and programming failed memory cells in consecutive and evenly spaced timeslots within a program loop, reducing time gaps between operations and improving efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If divisional program operations are used to program multiple memory cells, then current consumption is reduced, but programming time increases and efficiency decreases

Engineering Contradiction:
Improvecurrent consumptionVSAvoidprogramming efficiency
Core Design Contradiction:
Loss of energyVSProductivity

Solution Approach 1:

The patent segments the memory cells into multiple groups (first memory cells and second memory cells) and applies different programming strategies to each group. The first memory cells are programmed using conventional simultaneous programming, while the second memory cells are programmed using divisional programming operations. This segmentation allows the system to balance current consumption and programming efficiency by applying appropriate methods to different cell groups based on their specific requirements.

Inventive Principle:
Principle #1Segmentation

2Loss of energy

If divisional program operations are performed sequentially, then current consumption is limited, but time gaps between operations increase

Engineering Contradiction:
Improvecurrent consumptionVSAvoidtime gaps between operations
Core Design Contradiction:
Loss of energyVSLoss of time

Solution Approach 1:

The patent introduces a timing adjustment mechanism that dynamically optimizes the timing of divisional program operations. The system adjusts the timing parameters to minimize time gaps between sequential programming operations on different memory cell groups. This dynamic timing optimization allows the system to maintain limited current consumption while reducing unnecessary delays between operations, thereby improving overall programming throughput.

Inventive Principle:
Principle #15Dynamics

3Duration of action of moving object

If all memory cells are programmed simultaneously, then programming time is minimized, but current requirements become excessively high

Engineering Contradiction:
Improveprogramming timeVSAvoidcurrent requirement
Core Design Contradiction:
Duration of action of moving objectVSPower

Solution Approach 1:

The patent divides the memory cells into multiple groups (first memory cells and second memory cells) and programs them using different methods. The first memory cells are programmed simultaneously with lower current requirements, while the second memory cells are programmed using divisional operations. This segmentation strategy allows the system to achieve reasonable programming time without requiring excessively high current levels, as not all cells need to be programmed simultaneously at full current capacity.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The adaptive approach reduces the duration of program operations, enhances the reliability of programming multiple memory cells, and minimizes current consumption by optimizing the timing of divisional program operations.

Implementation Method 1

Phase change memory devices store data using phase change materials, such as chalcogenide, which are capable of stably transitioning between amorphous and crystalline phases

Methodology Applied
Scientific EffectPhase change: Phase Change

Implementation Method 2

The phase change material in a PRAM is converted to the amorphous state by heating the material to a first temperature above a predetermined melting temperature

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 3

The phase change material in a PRAM is converted to the amorphous state by heating the material to a first temperature above a predetermined melting temperature and then quickly cooling the material

Methodology Applied
Scientific EffectCooling: Cooling

Data Source

PatentUS7535747B2Phase change random access memory and related methods of operation
Publication Date: 2009.05.19 SAMSUNG ELECTRONICS CO LTD
  • US7535747B2 patent drawing
  • US7535747B2 patent drawing
  • US7535747B2 patent drawing

AI summary

In a phase change random access memory (PRAM) device, data is programmed in selected memory cells using a plurality of program loops. In each program loop, division program operations for cell groups including the selected memory cells are performed in consecutive timeslots.