Adaptive ECC Memory Remapping for Faulty Cell Replacement
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Solution Overview
Problem
Nonvolatile memory devices face errors due to deterioration and manufacturing defects, leading to increased error probabilities, which existing error detection and correction methods struggle to manage effectively.
Innovation Solution
Implementing adaptive error detection and correction methods by replacing error-prone memory locations with 'EC memory' and adjusting error code robustness, allowing for continued operation without loss of memory capacity and extending the usable lifetime of storage devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If error detection and correction methods are strengthened to handle deteriorating memory cells, then reliability improves, but device complexity increases
Solution Approach 1:
The patent implements dynamic error correction by transitioning from static ECC to dynamic BCH codes that adapt their strength based on real-time memory cell conditions. The system monitors memory deterioration and adjusts error correction parameters accordingly, allowing the error correction capability to be dynamic rather than fixed, thus resolving the contradiction between reliability and complexity.
Solution Approach 2:
The system changes error correction parameters (code strength, redundancy levels) based on the actual state of memory cells. As memory deteriorates, the system modifies error correction parameters to match the declining reliability, rather than maintaining constant high-strength error correction throughout the device lifecycle.
2Productivity
If memory operations continue on deteriorating memory cells, then productivity is maintained, but reliability deteriorates
Solution Approach 1:
The system performs preliminary identification of deteriorating memory cells through monitoring and characterization before they cause failures. By detecting degradation trends early, the system can proactively adjust error correction parameters or remap affected cells, maintaining productivity while preventing reliability deterioration from escalating.
Solution Approach 2:
The patent implements continuous feedback loops that monitor memory cell performance and use this information to adjust error correction strategies in real-time. The system reads memory cells, analyzes error patterns, and modifies error correction parameters based on the feedback, creating a closed-loop control system that balances productivity and reliability.
Data Source
AI summary
Subject matter disclosed herein relates to determining that a portion of a memory is at least partially non-functional, replacing the portion of at least partially non-functional memory; and adjusting an error detection and/or correction process responsive to determining that the portion of the memory is at least partially non-functional and/or replacing the portion of at least partially non-functional memory.