Adaptive Enhanced Corrective Read for Memory Reliability

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Solution Overview

Problem

Conventional memory sub-systems fail to adaptively address bit flip errors caused by cross-temperature effects, leading to reduced reliability and data retention due to inadequate consideration of environmental temperature changes during read and write operations.

Innovation Solution

Implementing adaptive enhanced corrective read operations in memory sub-systems, which selectively determine the need for enhanced corrective read based on temperature differences between write and read temperatures, and the life of the memory device, thereby optimizing sense time parameters on-the-fly.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional memory sub-systems use fixed read operations without temperature adaptation, then device complexity is reduced, but read accuracy and reliability deteriorate due to cross-temperature effects

Engineering Contradiction:
Improveread accuracyVSAvoidoperational complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements dynamic adjustment of read operations based on temperature conditions. The system transitions from fixed read operations to adaptive read operations that modify parameters such as sense time and voltage levels according to the temperature differential between write and read operations, thereby maintaining read accuracy across varying thermal conditions

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes operational parameters including sense time duration and read voltage levels based on temperature conditions. By adjusting these parameters dynamically according to the temperature differential, the system compensates for cross-temperature effects and maintains reliable data reading without requiring complete system redesign

Inventive Principle:
Principle #35Parameter changes

2Reliability

If enhanced corrective read operations are performed for all read operations, then read accuracy is improved, but productivity deteriorates due to increased operation time

Engineering Contradiction:
Improveread accuracyVSAvoidread speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies enhanced corrective read operations selectively only to specific conditions rather than universally. By identifying local conditions such as large temperature differentials or high program-erase cycle counts, the system applies enhanced correction only where necessary, thereby maintaining high read accuracy when needed while preserving overall read speed for normal operations

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements partial corrective read operations based on threshold criteria. Instead of always performing full enhanced corrective reads, the system applies correction only when temperature differential or PEC count exceeds predetermined thresholds, thereby avoiding unnecessary operational overhead while maintaining reliability when cross-temperature effects are likely to occur

Inventive Principle:
Principle #16Partial or excessive action

3Reliability

If sense time is extended for all read operations, then read accuracy is improved, but loss of time increases due to prolonged operation duration

Engineering Contradiction:
Improveread accuracyVSAvoidread operation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent dynamically adjusts sense time duration based on temperature conditions and program-erase cycle count. The sense time is extended only when temperature differential exceeds a threshold or PEC count indicates high wear conditions, thereby maintaining read accuracy when necessary while minimizing time loss during normal operating conditions

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent changes the sense time parameter adaptively based on operational conditions. By modifying this critical timing parameter according to temperature and wear state, the system optimizes the balance between read accuracy and operation time, preventing unnecessary time extension while ensuring adequate sensing time when cross-temperature effects are present

Inventive Principle:
Principle #35Parameter changes

4Reliability

If adaptive enhanced corrective read is implemented, then reliability is improved, but device complexity increases due to temperature monitoring and decision logic

Engineering Contradiction:
Improvedata retentionVSAvoidcontrol logic complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements self-service temperature compensation where the memory sub-system autonomously monitors its own operational conditions and adjusts read parameters accordingly. By using onboard temperature sensors and automatic decision logic based on PEC count, the system performs self-diagnosis and self-adjustment without external intervention, thereby improving data retention while keeping the control mechanism contained within the memory subsystem itself

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent employs feedback mechanisms where temperature information and PEC count data are continuously monitored and fed back to the control logic. This feedback enables the system to adapt read operations in real-time based on actual operating conditions, thereby improving data retention reliability while using manageable complexity through closed-loop control

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12242755B2Adaptive enhanced corrective read based on write and read temperature
Publication Date: 2025.03.04 MICRON TECHNOLOGY INC
  • US12242755B2 patent drawing
  • US12242755B2 patent drawing
  • US12242755B2 patent drawing

AI summary

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining whether a temperature offset value of the segment satisfies a threshold criterion associated with a program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.