Adaptive ESD Protection Capacitance for Multi-Chip Signal Integrity

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Solution Overview

Problem

Existing semiconductor devices face signal distortion due to capacitive ESD protection circuits, which worsen with higher frequencies and in multi-chip configurations, where multiple chips must charge or discharge capacitive elements, leading to deteriorated signal quality.

Innovation Solution

A semiconductor device with adjustable ESD protection units, where a logic circuit adjusts the capacitance of ESD protection units based on chip connection signals, allowing for the uncoupling of ESD protection elements to reduce capacitance and mitigate signal distortion, particularly in multi-chip configurations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If capacitive ESD protection circuits are added to pads, then protection against electrostatic discharge is improved, but signal distortion increases and rise/fall times are extended

Engineering Contradiction:
ImproveESD protection capabilityVSAvoidsignal quality
Core Design Contradiction:
ReliabilityVSLoss of information

Solution Approach 1:

The ESD protection circuit dynamically adjusts its capacitance value based on operating conditions. The capacitance is set to a first value when only one chip operates, and changed to a second value when multiple chips operate in parallel, allowing the circuit to adapt to different signal loading conditions and minimize distortion

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the electrical parameter (capacitance) of the ESD protection circuit based on the number of operating chips. By detecting whether one or multiple chips are operating in parallel, the system adjusts the capacitance value to optimize both protection capability and signal quality for each operating scenario

Inventive Principle:
Principle #35Parameter changes

2Productivity

If multiple chips are coupled together for parallel operations, then processing capability is improved, but signal distortion deteriorates due to cumulative capacitance

Engineering Contradiction:
Improveparallel processing capabilityVSAvoidsignal quality
Core Design Contradiction:
ProductivityVSLoss of information

Solution Approach 1:

The system uses feedback from detection circuits that monitor whether multiple chips are operating in parallel. Based on this feedback, the ESD protection capacitance is automatically adjusted to compensate for the cumulative capacitance effect, thereby maintaining signal quality even when multiple chips operate simultaneously

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The ESD protection circuit transitions from a static capacitance design to a dynamic one that automatically changes its capacitance value based on the number of active chips, enabling the system to maintain optimal signal quality across different parallel operating configurations

Inventive Principle:
Principle #15Dynamics

3Speed

If higher frequency signals are used, then data transmission speed is improved, but signal identification becomes more difficult due to capacitance effects

Engineering Contradiction:
Improvedata transmission speedVSAvoidsignal identification accuracy
Core Design Contradiction:
SpeedVSLoss of information

Solution Approach 1:

The invention changes the capacitance parameter of the ESD protection circuit based on operating conditions. By reducing capacitance when multiple chips operate or when high-frequency signals are used, the circuit minimizes signal distortion and maintains signal identification accuracy even at higher transmission speeds

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12002803B2Semiconductor device, electronic system, and electrostatic discharge protection method for semiconductor device thereof
Publication Date: 2024.06.04 NAN YA TECH
  • US12002803B2 patent drawing
  • US12002803B2 patent drawing
  • US12002803B2 patent drawing

AI summary

The present application discloses a semiconductor device, an electronic system and an electrostatic discharge (ESD) protection method for a semiconductor device thereof. The semiconductor device includes a substrate, an operation solder structure disposed on a first surface of the substrate for receiving an operation signal, a detection solder structure disposed on the first surface of the substrate for receiving a chip connection signal, and a semiconductor chip disposed on a second surface of the substrate. The semiconductor chip includes an operation electrical contact coupled to the operation solder structure, a detection electrical contact coupled to the detection solder structure, an ESD protection unit coupled to the operation electrical contact, and a logic circuit coupled to the detection electrical contact for adjusting capacitance of the ESD protection unit according to the chip connection signal.