Adaptive-Biased LDO Circuit for Wide Input Voltage Range

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Solution Overview

Problem

LDO circuits face challenges when employed in wide range input applications, particularly in systems requiring a wide operation voltage range and high-performance circuits like system-on-chip (SOC) digital circuits and computer processing units (CPUs), due to limitations in input range and incompatible manufacturing processes with traditional I/O transistors.

Innovation Solution

The use of core transistors with smaller channel lengths and strong driving capability, integrated into a power stage with adaptive biasing to protect against high-voltage stress, combined with a cascode operational amplifier and feedback circuit to stabilize output voltage and minimize noise.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If traditional I/O transistors are used in LDO circuits, then the manufacturing process is compatible with standard processes, but the input voltage range is limited and the driving capability is insufficient

Engineering Contradiction:
Improveinput voltage rangeVSAvoidmanufacturing process compatibility
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent changes the channel length parameter of the power transistor from traditional I/O transistor dimensions to core transistor dimensions (smaller channel length). This parameter change enables the LDO circuit to operate with a wider input voltage range and provides stronger driving capability, while the manufacturing process remains compatible with advanced semiconductor fabrication processes used for high-performance circuits

Inventive Principle:
Principle #35Parameter changes

2Power

If core transistors with smaller channel lengths are used, then the driving capability and input range are improved, but the transistor becomes more susceptible to high-voltage stress

Engineering Contradiction:
Improvedriving capabilityVSAvoidprotection against high-voltage stress
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent introduces an adaptive biasing circuit as an intermediary mechanism that dynamically adjusts the gate-source voltage of the core transistor. This biasing circuit acts as a mediator that protects the small-channel-length transistor from high-voltage stress by controlling its operating point, while still allowing the transistor to provide strong driving capability when needed

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent implements dynamic biasing where the gate-source voltage of the power transistor is not fixed but adapts in response to input voltage conditions. This dynamic adjustment allows the transistor to operate optimally across different voltage ranges while being protected from excessive stress conditions

Inventive Principle:
Principle #15Dynamics

3Adaptability or versatility

If the LDO circuit is designed for wide input range operation, then the adaptability is improved, but the stability and noise performance may deteriorate

Engineering Contradiction:
Improveoperation voltage rangeVSAvoidoutput voltage stability
Core Design Contradiction:
Adaptability or versatilityVSStability of the object's composition

Solution Approach 1:

The patent employs a feedback mechanism through the operational amplifier that continuously monitors the output voltage and adjusts the power transistor's gate voltage accordingly. This feedback control maintains output voltage stability even when the input voltage varies across a wide range, preventing the deterioration of performance that would otherwise occur in wide-range operation

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS20250110519A1Low drop-out circuit, electronic device, and method of manufacturing the same
Publication Date: 2025.04.03 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250110519A1 patent drawing
  • US20250110519A1 patent drawing
  • US20250110519A1 patent drawing

AI summary

The present disclosure provides a low drop-out (LDO) circuit. The LDO circuit includes an input terminal, an output terminal, a cascode operational amplifier, and a power stage. The cascode operational amplifier is electrically connected to the input terminal. The power stage has a first terminal electrically connected to the input terminal, a second terminal electrically connected to an output node of the cascode operational amplifier, and a third terminal electrically connected to the output terminal.