Adaptive Memory Controller ECC for Variable Device Status

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing memory systems face challenges in providing flexible operations according to varying conditions and statuses, leading to potential inappropriate functions or errors, especially as semiconductor fabrication scales down and data processing demands increase.

Innovation Solution

A memory system configuration that includes variable error correction and decompression circuits, which adjust their operations based on status information, allowing for adaptive error detection and correction, and data processing strategies to ensure stable and reliable data handling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a memory system uses a rigid fixed configuration for error correction and data processing, then the system structure is simple and easy to manufacture, but the system cannot adapt to varying conditions and may perform inappropriate functions or errors under particular conditions

Engineering Contradiction:
Improveadaptability to varying conditionsVSAvoidsystem configuration complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent implements dynamic configuration by allowing the memory controller to selectively enable or disable error correction functions based on status information from the memory device. The controller can adjust its operation mode (e.g., enabling/disabling ECC, changing data processing strategies) according to real-time conditions such as error rates, temperature, or workload, transforming a static system into an adaptive one that optimizes performance and reliability under varying conditions

Inventive Principle:
Principle #15Dynamics

2Reliability

If the memory system performs comprehensive error detection and correction operations, then data reliability is improved, but power consumption and processing time increase

Engineering Contradiction:
Improvedata processing reliabilityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent changes the operational parameters of error correction based on status information. The memory controller can adjust the level of error correction applied (e.g., switching between different ECC modes, adjusting correction thresholds, or changing data processing intensity) according to current system conditions. When error rates are low or conditions are favorable, the controller reduces error correction operations to save power, while maintaining high reliability when conditions deteriorate

Inventive Principle:
Principle #35Parameter changes

3Reliability

If the memory system performs comprehensive error detection and correction operations, then data reliability is improved, but processing speed decreases

Engineering Contradiction:
Improvedata processing reliabilityVSAvoiddata processing speed
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The patent applies partial error correction actions based on status information rather than always performing full comprehensive error detection and correction. The memory controller can selectively apply error correction only when necessary (e.g., when status indicators suggest potential errors, under certain workload conditions, or for specific data types), performing partial corrections rather than exhaustive processing, thus maintaining reliability while improving processing speed

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentEP3499376B1Memory system varying operation of memory controller according to internal status of memory device
Publication Date: 2022.07.13 SAMSUNG ELECTRONICS CO LTD
  • EP3499376B1 patent drawingFigure 1
  • EP3499376B1 patent drawingFigure 2
  • EP3499376B1 patent drawingFigure 3

AI summary

A memory system includes a memory device and a memory controller. The memory device outputs data in response to a read command. The memory device includes a first function circuit which performs a first operation based on data stored in the memory device, in response to the read command, to generate first processed data. The memory controller provides the read command to the memory device in response to a read request received from a host. The memory controller receives status information associated with performing the first operation. The memory controller includes a second function circuit which performs a second operation based on the first processed data to generate second processed data. A manner of the second operation varies based on the status information.