Adaptive Read Manager for Memory Subsystems
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Solution Overview
Problem
Conventional memory systems face inefficiencies in retrieving data due to shifts in optimized threshold voltages for memory cells, leading to prolonged latency and increased power consumption during read operations, especially when dealing with multiple bits of data and high bit error rates.
Innovation Solution
A memory sub-system with a read manager that adaptively and iteratively organizes sub-operations based on signal and noise characteristics to optimize read parameters, dynamically determining whether to skip or repeat sub-operations, and using predictive models to estimate data quality and error rates, thereby improving read command execution performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional read operations are used with fixed threshold voltages, then device complexity is low, but latency increases and productivity decreases due to prolonged read operations and repeated calibrations
Solution Approach 1:
The patent implements dynamic threshold voltage adjustment during read operations. The read manager adaptively modifies read thresholds based on real-time signal and noise characteristics measured from memory cells, transitioning from fixed to dynamic voltage levels to optimize read speed while maintaining accuracy
Solution Approach 2:
The system incorporates feedback mechanisms where the read manager continuously monitors read outcomes, signal quality, and error rates. Based on this feedback, it iteratively adjusts read parameters and threshold voltages to improve subsequent read operations, reducing latency through adaptive learning
2Measurement precision
If repeated calibrations are performed to handle threshold voltage shifts, then measurement precision improves, but power consumption increases and time is lost
Solution Approach 1:
The system performs preliminary calibration to establish initial threshold voltage values before actual read operations. These pre-determined thresholds are then used for multiple subsequent reads, avoiding the need for repeated full calibrations and reducing power consumption while maintaining measurement precision
Solution Approach 2:
Instead of performing complete recalibration for every read operation, the system applies partial adjustments to thresholds based on measured drift. This partial action approach maintains sufficient precision without the excessive power and time costs of full recalibration
3Productivity
If adaptive and iterative sub-operations are implemented, then productivity improves through reduced latency, but device complexity increases due to predictive models and dynamic organization
Solution Approach 1:
The read operation is divided into discrete sub-operations including calibration, signal measurement, noise characterization, and data retrieval. The read manager can selectively execute and organize these segmented sub-operations adaptively, improving productivity by only performing necessary steps while managing complexity through modular design
Solution Approach 2:
The system dynamically changes operational parameters such as read thresholds, voltage levels, and sub-operation selection based on measured memory cell characteristics. These parameter changes enable adaptive optimization of productivity while the read manager handles the complexity of coordinate.20
4Reliability
If read operations are optimized for high bit error rates, then reliability improves, but time is increased due to additional error correction and verification steps
Solution Approach 1:
The system applies error correction and verification steps selectively based on measured bit error rates. When error rates are low, minimal verification is performed. When error rates increase, additional correction steps are activated. This partial action approach maintains reliability for high error rates while minimizing time loss when errors are rare
Data Source
AI summary
A memory sub-system configured to adaptively and/or iteratively determine sub-operations of executing a read command to retrieve data from memory cells. For example, after receiving the read command from a processing device of a memory sub-system, a memory device starts an atomic operation of executing the read command in the memory device. The memory device can have one or more groups of memory cells formed on an integrated circuit die and a calibration circuit configured to measure signal and noise characteristics of memory cells in the memory device. During the atomic operation, the calibration circuit generates outputs, based on which a read manager of the memory sub-system identifies sub-operations to be performed in the atomic operation and/or decides to end the atomic operation.