Adaptive Switch Control Voltage for Low-Voltage Bandgap References

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Solution Overview

Problem

The challenge of generating a stable reference voltage in semiconductor devices under miniaturization and low voltage conditions is exacerbated by issues such as Bipolar Junction Transistor dispersion, leakage current, and contact resistance, making it difficult to control switches effectively in bandgap reference circuits.

Innovation Solution

A semiconductor device incorporating a switch control voltage generator that generates an adaptive switch level voltage using a first and second resistor and a bipolar junction transistor, with a switch controller adjusting the voltage based on temperature to improve switching accuracy and reliability, ensuring the bandgap reference generator provides a stable reference voltage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If switches are used in bandgap reference circuits to improve accuracy through trimming or chopping, then measurement precision is improved, but reliability deteriorates due to turn-off failures and leakage currents in low-voltage environments

Engineering Contradiction:
Improveaccuracy of bandgap reference circuitVSAvoidswitch control reliability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent changes the voltage parameter of the switch control signal by generating an adaptive switch level voltage that varies with temperature. This temperature-dependent voltage adjustment ensures that switches receive adequate control voltage even in low-voltage environments, preventing turn-off failures and leakage currents while maintaining the ability to perform trimming and chopping operations for high precision reference voltage generation.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If process miniaturization is pursued to increase device integration density, then productivity is improved, but manufacturing precision deteriorates due to increased BJT dispersion, leakage current, and contact resistance

Engineering Contradiction:
Improvedevice integration densityVSAvoidaccuracy of BGR circuit
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent compensates for process variations in miniaturized devices by dynamically adjusting the switch control voltage parameter based on temperature. This adaptive voltage generation counteracts the increased sensitivity to process variations (BJT dispersion, leakage, contact resistance) that occurs with miniaturization, enabling high integration density while maintaining BGR circuit accuracy.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If adaptive switch level voltage with temperature compensation is generated using additional circuit components, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improveswitch control reliabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the switch control voltage generation function with the existing bandgap reference circuit by utilizing the temperature-dependent characteristics already present in the BGR circuit. The adaptive switch level voltage is generated by combining existing circuit elements (current sources, resistors, and transistor configurations) rather than adding completely separate control circuits, thus improving reliability through temperature compensation while minimizing additional complexity.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances the reliability of the bandgap reference voltage by preventing turn-off failures and leakage currents in low-voltage switches, maintaining accuracy across varying temperatures.

Implementation Method 1

The adaptive switch level voltage has a slope with respect to temperature that is greater than a base-emitter voltage of the first bipolar junction transistor

Methodology Applied
Scientific EffectTemperature-dependent voltage generation:

Data Source

PatentUS12393218B2Switch control voltage generator, bandgap reference generator, and method for generating switch voltage thereof
Publication Date: 2025.08.19 SAMSUNG ELECTRONICS CO LTD
  • US12393218B2 patent drawing
  • US12393218B2 patent drawing
  • US12393218B2 patent drawing

AI summary

A semiconductor device including a bandgap reference generator that generates a reference voltage; a switch control voltage generator that generates a first reference current based on the reference voltage, and generates an adaptive switch level voltage by distributing the first reference current to a first path and a second path, the first path including a first resistor, and the second path including a second resistor and a first bipolar junction transistor connected in series; and a switch controller that generates a switch control signal for controlling switches included in the bandgap reference generator based on the adaptive switch level voltage. The adaptive switch level voltage has a slope with respect to temperature that is greater than a base-emitter voltage of the first bipolar junction transistor.