Adaptive Switch Voltage for Low-Voltage Bandgap Reference Control

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Solution Overview

Problem

The miniaturization of semiconductor processes has made it increasingly difficult to control switches in low-voltage environments, affecting the accuracy of bandgap reference generators due to issues like Bipolar Junction Transistor dispersion, leakage current, and contact resistance, which are not effectively addressed by existing trimming or chopping techniques.

Innovation Solution

A switch control voltage generator that generates an adaptive switch level voltage with a temperature slope greater than the base-emitter voltage of a bipolar junction transistor, used to control switches in bandgap reference generators, ensuring reliable operation by adjusting resistances and current distribution to maintain accurate voltage levels across varying temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If miniaturization of semiconductor processes is implemented to increase integration density, then device integration increases, but switch control accuracy deteriorates due to low-voltage environment limitations

Engineering Contradiction:
Improveintegration densityVSAvoidswitch control accuracy
Core Design Contradiction:
Quantity of substanceVSMeasurement precision

Solution Approach 1:

The patent implements dynamic switch control voltage generation that adapts to temperature variations. The circuit dynamically adjusts the switch control voltage level based on temperature conditions, transitioning from fixed voltage control to adaptive voltage control. This dynamic approach compensates for the deteriorated switch control accuracy in miniaturized low-voltage environments while maintaining high integration density.

Inventive Principle:
Principle #15Dynamics

2Measurement precision

If trimming or chopping techniques are applied to optimize BGR circuit accuracy, then reference voltage accuracy improves, but reliability deteriorates due to turn-off failures and leakage currents in low-voltage switches

Engineering Contradiction:
Improvereference voltage accuracyVSAvoidswitch operation reliability
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent changes the voltage parameter of switch control signals based on temperature conditions. By generating adaptive switch control voltages that vary with temperature, the circuit ensures switches remain properly biased across all operating conditions. This prevents turn-off failures and leakage currents that occur with fixed voltage control, thereby improving switch reliability while maintaining reference voltage accuracy through proper switching operation.

Inventive Principle:
Principle #35Parameter changes

3Volume of moving object

If low-voltage switches are used in miniaturized processes, then device size reduces, but switching accuracy deteriorates due to increased sensitivity to voltage variations

Engineering Contradiction:
Improvedevice sizeVSAvoidswitching accuracy
Core Design Contradiction:
Volume of moving objectVSMeasurement precision

Solution Approach 1:

The patent implements a feedback mechanism where temperature information is used to adjust the switch control voltage. The temperature-dependent voltage generation circuit continuously adapts the control voltage level based on actual operating conditions. This feedback approach compensates for the increased voltage sensitivity of low-voltage switches in miniaturized devices, maintaining high switching accuracy despite reduced device size and lower voltage margins.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances the switching accuracy and reliability of bandgap reference generators, preventing turn-off failures and leakage currents, thereby ensuring a stable reference voltage despite temperature changes and process variations.

Implementation Method 1

the adaptive switch level voltage has a slope with respect to temperature that is greater than a base-emitter voltage of the first bipolar junction transistor

Methodology Applied
Scientific EffectBase-emitter voltage temperature characteristic:

Implementation Method 2

process issues such as Bipolar Junction Transistor BJT dispersion, leakage current, and contact resistance have an increasing effect on the accuracy of the BGR circuit

Methodology Applied
Scientific EffectBipolar Junction Transistor dispersion:

Data Source

PatentEP4492188A1Switch control voltage generator, bandgap reference generator, and method for generating switch voltage thereof
Publication Date: 2025.01.15 SAMSUNG ELECTRONICS CO LTD
  • EP4492188A1 patent drawingFigure 1
  • EP4492188A1 patent drawingFigure 2
  • EP4492188A1 patent drawingFigure 3A

AI summary

A semiconductor device including a bandgap reference generator that generates a reference voltage; a switch control voltage generator that generates a first reference current based on the reference voltage, and generates an adaptive switch level voltage by distributing the first reference current to a first path and a second path, the first path including a first resistor, and the second path including a second resistor and a first bipolar junction transistor connected in series; and a switch controller that generates a switch control signal for controlling switches included in the bandgap reference generator based on the adaptive switch level voltage. The adaptive switch level voltage has a slope with respect to temperature that is greater than a base-emitter voltage of the first bipolar junction transistor.