In Situ ADC Passivation on Metal Surfaces Without Plasma Damage
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving uniformity and stability of passivation layers on metal surfaces during selective deposition, particularly with carbene-based precursors, which are difficult to isolate and handle due to their high reactivity and thermal instability, and conventional methods like plasma deposition cause damage and uneven deposition.
Innovation Solution
A method involving a first and second precursor that react in situ on the metal surface to form a carbene complex, such as acyclic diamino carbenes (ADCs), ensuring stable and selective deposition without halogen-metal bonds and plasma damage, using isonitrile and amine precursors to form a passivation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional plasma deposition methods are used to deposit passivation layers, then deposition speed is improved, but plasma-induced damage and uneven deposition occur
Solution Approach 1:
The patent replaces plasma-based deposition with a chemical precursor-based deposition method. Instead of using plasma (a physical/energetic system), the invention uses molecular precursors that chemically react with the metal surface to form passivation layers, thereby eliminating plasma-induced damage while maintaining deposition effectiveness
Solution Approach 2:
The patent changes the deposition parameters from high-energy plasma conditions to controlled chemical reaction conditions. By using precursors with specific chemical properties and controlling reaction parameters such as temperature and precursor concentration, the method achieves uniform deposition without the harmful effects of plasma
2Stability of the object's composition
If carbene-based precursors are used for selective deposition, then passivation layer stability is improved, but handling difficulty increases due to high reactivity and thermal instability
Solution Approach 1:
The patent segments the carbene formation process into two separate steps: first depositing a metal-carbene precursor layer, then converting it to the final carbene passivation layer through a controlled second step. This segmentation allows the unstable carbene to be formed and stabilized in situ on the substrate rather than being handled in bulk
Solution Approach 2:
The patent uses an intermediary precursor compound that contains the carbene moiety in a stable, non-reactive form during handling and deposition. This intermediary is converted to the active carbene species only when it contacts the metal substrate, thereby protecting the unstable carbene from premature reactions while enabling stable passivation layer formation
3Device complexity
If selective deposition on metal surfaces is achieved, then lithographic steps are reduced, but uniformity and process control of layer thickness become more challenging
Solution Approach 1:
The patent employs a self-limiting deposition mechanism where the precursor automatically reacts with exposed metal surfaces to form a uniform passivation layer. The reaction naturally stops when the metal surface is fully covered, providing inherent thickness control without requiring complex process parameters or multiple lithography steps for patterning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves a thermally and chemically stable passivation layer with high conformity on narrow features and high aspect ratios, avoiding synthesis challenges and plasma-induced defects, with selective deposition on metal surfaces over dielectrics.
Implementation Method 1
A method involving a first and second precursor that react in situ on the metal surface to form a carbene complex
Implementation Method 2
selective deposition on metal surfaces over dielectrics
Data Source
AI summary
Methods of selectively depositing a passivation layer on a metal surface of a semiconductor substrate are described. Exemplary methods may include exposing the semiconductor substrate having a metal surface and a non-metal surface to a first precursor to form a first portion of the passivation layer on the metal surface, the first precursor including an isonitrile. The exemplary methods may further include exposing the semiconductor substrate comprising a metal surface and a non-metal surface to a second precursor to form the passivation layer on the metal surface. The second precursor may include an amine, an alcohol, or a thiol.