Adhesive Film Amine Phenolic Curing for Semiconductor Die-Shear Strength

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing adhesive films for semiconductor assembly face challenges in achieving high die-shear strength and void removal efficiency, particularly during the die-attachment and EMC molding processes, due to limitations in storage modulus variation and void generation.

Innovation Solution

An adhesive film comprising a combination of an amine curing agent and a phenolic curing agent, with a specific mole ratio, which enhances storage modulus variation from 40°C to 170°C, thereby improving die-shear strength and facilitating void removal during EMC molding.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a conventional adhesive film is used for semiconductor assembly, then the basic die-attachment function is achieved, but the die-shear strength is insufficient and void generation occurs during EMC molding

Engineering Contradiction:
Improvedie-shear strengthVSAvoidvoid generation
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The patent changes the chemical composition parameters of the adhesive film by incorporating both amine curing agent and phenolic curing agent in specific proportions. This dual-curing system modifies the crosslinking density and network structure, resulting in enhanced die-shear strength and reduced void generation during EMC molding processes.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The adhesive film employs a composite curing system combining amine and phenolic curing agents. This composite approach creates a synergistic effect where the amine curing agent provides initial crosslinking and the phenolic curing agent contributes to thermal stability and further crosslinking, achieving superior mechanical strength and void resistance compared to single-curing systems.

Inventive Principle:
Principle #40Composite materials

2Strength

If the storage modulus variation is limited, then the adhesive film maintains stability, but it cannot achieve high die-shear strength and efficient void removal

Engineering Contradiction:
Improvedie-shear strengthVSAvoidstorage modulus variation
Core Design Contradiction:
StrengthVSStability of the object's composition

Solution Approach 1:

The patent optimizes the ratio of amine curing agent to phenolic curing agent to control the storage modulus variation. By adjusting these chemical parameters, the adhesive film achieves a balance between stability and performance, enabling high die-shear strength and effective void removal while maintaining composition stability across the curing temperature range.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The adhesive film achieves high die-shear strength and excellent void characteristics, ensuring reliable semiconductor assembly by suppressing void generation and facilitating efficient void removal, thus enhancing the reliability and quality of semiconductor devices.

Implementation Method 1

An adhesive film comprising a combination of an amine curing agent and a phenolic curing agent

Methodology Applied
Scientific EffectChemical Bonding: Chemical Bonding

Implementation Method 2

pre-curing is performed at 125° C. to 150° C. for a predetermined period of time

Methodology Applied
Scientific EffectThermal Energy: Heating

Data Source

PatentUS9169425B2Adhesive film and electronic device including the same
Publication Date: 2015.10.27 CHEIL INDUSTRIES INC
  • US9169425B2 patent drawing
  • US9169425B2 patent drawing

AI summary

An adhesive film includes an amine curing agent and a phenolic curing agent, and has a ratio of a storage modulus at 170° C. after 80% or more curing to a storage modulus at 40° C. before curing in the range of about 1.5 to about 3.0.