Adhesive Film Material for Fine Resist Pattern Collapse Suppression
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Solution Overview
Problem
Existing photoresist compositions face challenges in fine patterning due to reduced resolution performance, pattern collapse, and lack of etching selectivity, particularly in multilayer resist methods, necessitating materials that enhance adhesiveness and suppress pattern collapse while maintaining etching resistance.
Innovation Solution
A material comprising a resin with specific structural units, a thermal acid generator, and an organic solvent is used to form an adhesive film between a silicon-containing middle layer film and a resist upper layer film, enhancing adhesiveness and suppressing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the film thickness of the photoresist film is thinned to maintain resolution in fine patterning, then resolution performance is improved, but etching resistance is reduced
Solution Approach 1:
The patent divides the single photoresist film into multiple layers: a thin upper photoresist layer for high-resolution patterning and a thicker lower adhesive layer for etching resistance. This segmentation allows each layer to optimize its thickness for its specific function, resolving the contradiction between resolution and etching resistance.
Solution Approach 2:
The patent transitions from a one-dimensional solution (varying single-layer thickness) to a two-dimensional solution (multiple layers with different thicknesses and functions). The upper layer is thin for resolution while the lower layer is thick for etching resistance, allowing both requirements to be satisfied simultaneously in different dimensional aspects.
2Manufacturing precision
If the photoresist film thickness is reduced for fine patterning, then pattern resolution is improved, but pattern collapse increases
Solution Approach 1:
The patent segments the photoresist structure into an upper pattern-forming layer and a lower supporting adhesive layer. The lower layer provides mechanical support and adhesion to the substrate, preventing pattern collapse while the upper layer maintains fine pattern resolution.
Solution Approach 2:
The lower adhesive layer acts as an intermediary between the thin upper photoresist layer and the substrate. It provides mechanical support and adhesion, mediating the structural requirements to prevent pattern collapse while allowing the upper layer to achieve fine patterning.
3Use of energy by moving object
If novolak resins and polyhydroxystyrene are used to reduce absorbance at shorter wavelengths, then exposure sensitivity is improved, but etching resistance decreases
Solution Approach 1:
The patent assigns different resin types to different layers: the upper layer uses novolak or polyhydroxystyrene for high exposure sensitivity at short wavelengths, while the lower layer uses resins with high etching resistance. This segmentation allows each layer to optimize its material properties for its specific function.
Solution Approach 2:
The patent applies different material qualities to different parts of the photoresist structure. The upper layer has high optical sensitivity for exposure, while the lower layer has high etching resistance for pattern transfer, allowing each local region to have the optimal quality for its function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material allows for high-precision formation of fine patterns by improving adhesiveness and reducing pattern collapse, enabling effective pattern transfer in multilayer resist processes.
Implementation Method 1
a thermal acid generator
Implementation Method 2
an organic solvent
Data Source
AI summary
A material for forming an adhesive film formed between a silicon-containing middle layer and a resist upper layer film, containing: (A) a resin having structural units shown by formula (1) and formula (2); (B) a thermal acid generator; and (C) an organic solvent, in the component (A), the structural unit shown by formula (1) having a molar fraction of 5% or more and the structural unit shown by formula (2) having a molar fraction of 30% or more. An objective is to provide a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and also makes it possible to form an excellent pattern profile; a patterning process using the material.