Material for forming adhesive film, method for forming adhesive film using the same, and patterning process using material for forming adhesive film
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Solution Overview
Problem
Existing photoresist compositions face challenges in fine patterning due to reduced resolution performance, pattern collapse, and lack of etching selectivity, necessitating a material that enhances adhesiveness and suppresses pattern collapse in multilayer resist methods for semiconductor manufacturing.
Innovation Solution
A material comprising a resin with specific structural units, a crosslinking agent, a photo-acid generator, and an organic solvent is used to form an adhesive film between a silicon-containing middle layer film and a resist upper layer film, enhancing adhesiveness and suppressing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the film thickness of the photoresist film is thinned to maintain resolution in fine patterning, then resolution performance is improved, but etching resistance is reduced
Solution Approach 1:
The patent divides the single photoresist film into multiple layers: a thin upper photoresist film for high-resolution patterning and a lower adhesive film with etching resistance. This segmentation allows each layer to perform its specialized function - the upper layer provides resolution while the lower layer provides etching protection
Solution Approach 2:
The patent creates a composite resist structure combining two different film materials with complementary properties. The upper photoresist film uses resins with low absorbance for high resolution, while the lower adhesive film uses resins with high etching resistance, forming a composite system that achieves both resolution and etching resistance simultaneously
2Strength
If a multilayer resist method is introduced to improve etching resistance, then etching resistance is improved, but device complexity increases
Solution Approach 1:
The lower adhesive film serves multiple functions simultaneously: it provides etching resistance during substrate processing, ensures good adhesion between the upper photoresist film and substrate, and maintains pattern profile stability. This multi-functionality reduces the need for additional specialized layers
3Manufacturing precision
If the photoresist film thickness is reduced for fine patterning, then resolution is improved, but pattern collapse increases
Solution Approach 1:
By segmenting the resist system into upper and lower films, the patent allows the thin upper film to provide high resolution while the lower film provides mechanical support and adhesion, preventing pattern collapse that would occur in a single thin film structure
Solution Approach 2:
The lower adhesive film acts as an intermediary layer between the thin upper photoresist film and the substrate, providing mechanical support and strong adhesion that prevents the thin patterned film from collapsing during processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The material achieves high adhesiveness to the resist upper layer film, suppresses fine pattern collapse, and allows for precise pattern formation in multilayer resist processes, improving film-formability and pattern profile adjustment.
Implementation Method 1
the photo-acid generator (C)... (C) a photo-acid generator
Implementation Method 2
a crosslinking agent containing one or more compounds shown by the following general formula (2)... (B) a crosslinking agent containing one or more compounds shown by the following general formula (2)
Implementation Method 3
an organic solvent... (D) an organic solvent
Data Source
Figure 1(A)~1(G)
Figure 2
AI summary
The present invention is a material for forming an adhesive film formed between a silicon-containing middle layer film and a resist upper layer film, the material for forming an adhesive film containing: (A) a resin having a structural unit shown by the following general formula (1); (B) a crosslinking agent containing one or more compounds shown by the following general formula (2); (C) a photo-acid generator; and (D) an organic solvent. This provides: a material for forming an adhesive film in a fine patterning process by a multilayer resist method in a semiconductor device manufacturing process, where the material gives an adhesive film that has high adhesiveness to a resist upper layer film, has an effect of suppressing fine pattern collapse, and that also makes it possible to form an excellent pattern profile; a patterning process using the material; and a method for forming the adhesive film.