Adhesive Layer Semiconductor Substrate Transfer
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Solution Overview
Problem
Current semiconductor layer transfer techniques require extensive polishing for low surface roughness, making them inefficient and costly, particularly for mass-production of semiconductor substrates.
Innovation Solution
An ion implantation method is used to create a predetermined splitting area in a donor substrate, followed by the application of a ceramic-based, graphite-based, or metal-based adhesive layer without prior polishing, allowing for the transfer of semiconductor layers onto a receiver substrate without the need for surface preparation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If molecular bonding techniques or SMARTCUT technology are used for layer transfer, then bonding reliability is improved, but manufacturing complexity and production cost increase due to required polishing processes
Solution Approach 1:
The invention extracts and eliminates the polishing step from the conventional bonding process. By using adhesive bonding instead of molecular bonding, the requirement for low surface roughness is removed, allowing direct bonding of as-received wafer surfaces without extensive polishing preparation.
Solution Approach 2:
The invention changes the bonding mechanism from molecular bonding (requiring nanometer-scale surface precision) to adhesive bonding (tolerant of micrometer-scale surface roughness). This parameter change in bonding approach fundamentally alters the required surface quality specifications.
2Manufacturing precision
If extensive polishing processes are performed to achieve low surface roughness, then bonding quality is improved, but production time and cost increase
Solution Approach 1:
The polishing operation is completely removed from the process flow. The adhesive bonding method enables direct bonding of surfaces with typical as-received roughness, eliminating the time-consuming polishing step that traditionally required hours of processing per wafer.
Solution Approach 2:
The adhesive layer is applied in advance to the donor wafer surface, creating a bonding interface that is tolerant of surface irregularities. This preliminary adhesive application eliminates the need for subsequent polishing to achieve bonding-compatible surface quality.
3Manufacturing precision
If polishing processes are used to prepare substrates for bonding, then surface quality is improved, but material loss and substrate damage increase
Solution Approach 1:
The polishing step that causes material removal is extracted from the process. Adhesive bonding allows direct use of as-received wafer surfaces, preventing the loss of semiconductor material that occurs during mechanical or chemical-mechanical polishing operations.
4Ease of manufacture
If adhesive bonding is used instead of molecular bonding, then ease of manufacture is improved, but bonding strength may be compromised
Solution Approach 1:
The bonding mechanism is changed from molecular bonding (reliant on surface chemistry and nanometer-scale contact) to adhesive bonding (reliant on mechanical interlocking and adhesive chemistry). This parameter change enables manufacturing simplicity while maintaining or improving bonding strength through the robust nature of adhesive materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of semiconductor-on-insulator structures with improved mechanical stability and reduced production costs, as it eliminates the need for polishing and allows for the reuse of substrates, while maintaining high temperature compatibility.
Implementation Method 1
performing an ion implantation at a predetermined depth of the donor substrate to form an in-depth predetermined splitting area inside the donor substrate
Data Source
AI summary
The invention relates to a method for fabricating a substrate, comprising the steps of providing a donor substrate with at least one free surface, performing an ion implantation at a predetermined depth of the donor substrate to form an in-depth predetermined splitting area inside the donor substrate, and is characterized in providing a layer of an adhesive, in particular an adhesive paste, over the at least one free surface of the donor substrate. The invention further relates to a semiconductor structure comprising a semiconductor layer, and a layer of a ceramic-based and/or a graphite-based and/or a metal-based adhesive provided on one main side of the semiconductor layer.