Adhesive Polymer Cleaning Composition for Stable Etch Rate
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Solution Overview
Problem
Existing cleaning agents for adhesive polymers used in semiconductor wafer thinning processes experience a decrease in etch rate over time, particularly when using aprotic N-substituted amide compounds and dipropylene glycol dimethyl ether as solvents, which affects the efficiency of adhesive residue removal.
Innovation Solution
A composition comprising quaternary alkylammonium fluoride or its hydrate, an N-substituted amide compound without active hydrogen on the nitrogen atom, dipropylene glycol dimethyl ether, and an antioxidant is used to stabilize the etch rate over time, preventing oxidation of the amide compound and maintaining reactivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a cleaning agent containing TBAF and aprotic solvent is used to clean adhesive polymer, then etch performance is improved, but etch rate decreases over time due to oxidation of the amide compound
Solution Approach 1:
The patent applies preliminary action by adding an antioxidant to the cleaning agent formulation before use. This antioxidant preemptively prevents oxidation of the N-substituted amide compound during storage, maintaining the etch rate stability over time without requiring changes to the core TBAF-based cleaning mechanism
Solution Approach 2:
The patent modifies the chemical composition parameters of the cleaning agent by introducing an antioxidant component. This parameter change addresses the time-dependent degradation issue while preserving the original etching functionality, allowing the cleaning agent to maintain consistent performance over extended storage periods
2Productivity
If N-substituted amide compound and dipropylene glycol dimethyl ether are used as solvents, then adhesive decomposition is improved, but oxidation occurs over time reducing effectiveness
Solution Approach 1:
The patent converts the harmful oxidation effect into a beneficial outcome by selecting an antioxidant that specifically protects the N-substituted amide compound. The antioxidant transforms the vulnerable chemical structure into a stable configuration, allowing the solvent system to maintain both its adhesive-decomposing capability and long-term stability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively suppresses the decrease in etch rate with time, ensuring long-term stability and efficiency in cleaning adhesive polymers, particularly polyorganosiloxane compounds, on semiconductor wafers.
Implementation Method 1
Since a fluoride ion of TBAF participates in the cleavage of an Si—O bond via Si—F bond formation, the cleaning agent can be provided with etch performance.
Implementation Method 2
Since the polar aprotic solvent can dissolve TBAF and does not form solvation via a hydrogen bonding with the fluoride ion, the reactivity of the fluoride ion can be increased.
Implementation Method 3
A composition comprising at least one of a quaternary alkylammonium fluoride and a hydrate of a quaternary alkylammonium fluoride; (A) an N-substituted amide compound having no active hydrogen on a nitrogen atom, and (B) dipropylene glycol dimethyl ether, as an aprotic solvent; and an antioxidant.
Data Source
AI summary
The present invention provides a composition which is suppressed in decrease of the etching rate over time. A composition which contains; at least one of a quaternary alkyl ammonium fluoride and a hydrate of a quaternary alkyl ammonium fluoride; (A) an N-substituted amide compound that has no active hydrogen on a nitrogen atom and (B) a dipropylene glycol dimethyl ether, which serve as aprotic solvents; and an antioxidant.