Adhesive Polymer Cleaning Composition for Wafer Interface Protection
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Solution Overview
Problem
Existing cleaning agents for removing adhesive polymers from device wafers often penetrate between the wafer and the pressure sensitive adhesive layer, causing corrosion, deterioration, or leaving adhesive residues, which requires modifications to the fixing tape or manufacturing process.
Innovation Solution
A decomposing cleaning composition comprising quaternary alkylammonium fluoride and a specific combination of aprotic solvents, including N-substituted amide compounds and organic sulfur oxides, which suppresses penetration into the contact interface between the substrate and the pressure sensitive adhesive layer while maintaining a high etch rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a cleaning agent with high etch performance is used to remove adhesive polymer, then the etch rate is improved, but the cleaning agent penetrates into the contact interface between the substrate and pressure sensitive adhesive layer, causing corrosion and deterioration
Solution Approach 1:
The patent changes the chemical parameters of the cleaning agent by specifying precise compositional ratios: 0.1-10 mass% quaternary alkylammonium fluoride, 1-30 mass% N-substituted amide compound, and 60-98 mass% cyclic carbonate compound. This optimized parameter combination achieves high etch performance while controlling penetration into the pressure sensitive adhesive layer, thereby resolving the contradiction between etch rate and harmful effects.
Solution Approach 2:
The patent creates a composite cleaning agent system combining four different chemical components (quaternary alkylammonium fluoride, N-substituted amide compound, cyclic carbonate compound, and water) in specific proportions. This composite formulation synergistically achieves both high adhesive polymer removal efficiency and protection of the pressure sensitive adhesive layer from corrosion and deterioration.
2Manufacturing precision
If the cleaning agent penetrates into the contact interface, then adhesive residues may remain, but the cleaning action becomes less effective on the adhesive polymer
Solution Approach 1:
The patent optimizes the concentration parameters of the cleaning agent components to achieve the right balance: sufficient quaternary alkylammonium fluoride (0.1-10 mass%) for penetrating and removing adhesive residues from interfaces, while controlling the overall formulation to maintain effective cleaning action on the adhesive polymer surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning composition achieves a high etch rate for adhesive polymers while effectively preventing penetration into the contact interface, thus avoiding corrosion, deterioration, and adhesive residues without requiring changes to the fixing tape or manufacturing process.
Implementation Method 1
Since a fluoride ion of TBAF participates in the cleavage of an Si—O bond via Si—F bond formation, the cleaning agent can be provided with etch performance.
Implementation Method 2
the polar aprotic solvent can dissolve TBAF and does not form solvation via a hydrogen bonding with the fluoride ion, the reactivity of the fluoride ion can be increased.
Data Source
AI summary
Provided is a decomposing/cleaning composition for an adhesive polymer having a high etching rate and suppressed infiltration into a contact interface between a substrate such as a device wafer and an adhesive layer such as a fixing tape. The decomposing/cleaning composition of one embodiment is a decomposing/cleaning composition for an adhesive polymer containing a quaternary alkylammonium fluoride or a quaternary alkylammonium fluoride hydrate and an aprotic solvent, wherein the aprotic solvent contains (A) an N-substituted amide compound having no active hydrogens on the nitrogen atoms and (B) at least one organic sulfur oxide selected from the group consisting of sulfoxide compounds and sulfone compounds.