Two-Layer Adhesive Resin for Semiconductor Support Separation
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Solution Overview
Problem
Current semiconductor packaging technologies face challenges in achieving easy preparation, thermal process resistance, and efficient separation of support layers, particularly in fan-out wafer level package (FOWLP) processes, where the adhesive systems used in TSV forming technology do not comply with the RDL-first technique, leading to incomplete removal of adhesive residues and reduced productivity.
Innovation Solution
A semiconductor device comprising a support with a two-layer adhesive resin system, where the first layer is a photo-decomposable resin with a fused ring in the main chain and the second layer is a non-silicone base thermoplastic resin, providing heat resistance and easy separation, along with a method involving specific steps for forming redistribution layers and mold resin layers to enhance the bonding and separation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective tape based on organic resin film is attached to prevent wafer breakage during grinding, then the wafer is protected from breakage, but the tape has insufficient strength and heat resistance to withstand the TSV forming step and interconnect formation step
Solution Approach 1:
The patent applies composite materials by combining an inorganic substrate (glass or silicon) with an organic adhesive layer to create a support structure that provides both the mechanical strength needed for TSV formation and the adhesion properties required for wafer handling. This composite structure resolves the contradiction between protection during grinding and strength/heat resistance during subsequent processing steps.
2Strength
If a support substrate is bonded to a semiconductor substrate via an adhesive layer to withstand grinding and TSV formation, then the system gains sufficient strength and heat resistance, but the adhesive system used in TSV forming technology does not comply with the RDL-first technique, leading to incomplete removal of adhesive residues
Solution Approach 1:
The patent segments the adhesive system into two distinct layers: a first adhesive layer optimized for bonding the support substrate to the semiconductor substrate during TSV formation, and a second adhesive layer optimized for release and separation. This segmentation allows each layer to be independently optimized for its specific function, enabling complete removal of adhesive residues while maintaining sufficient bonding strength during processing.
Solution Approach 2:
The patent applies parameter changes by carefully controlling the glass transition temperature (Tg) and other thermal properties of the adhesive layers. The first adhesive layer has a Tg of 50-150°C to provide stable bonding during TSV formation, while the second adhesive layer has a Tg of -50-50°C to enable easy release. These parameter changes resolve the contradiction between maintaining bond strength and enabling complete adhesive removal.
3Productivity
If the RDL formation and packaging are followed by release of the support substrate, then the RDL-first technique can be applied to application processors with numerous terminals, but the adhesive layer is not completely removed with residues remaining on the insulating layer
Solution Approach 1:
The patent segments the adhesive system into two distinct layers: a first adhesive layer optimized for bonding the support substrate to the semiconductor substrate during TSV formation, and a second adhesive layer optimized for release and separation. This segmentation allows each layer to be independently optimized for its specific function, enabling complete removal of adhesive residues while maintaining sufficient bonding strength during processing.
Solution Approach 2:
The patent applies parameter changes by carefully controlling the glass transition temperature (Tg) and other thermal properties of the adhesive layers. The first adhesive layer has a Tg of 50-150°C to provide stable bonding during TSV formation, while the second adhesive layer has a Tg of -50-50°C to enable easy release. These parameter changes resolve the contradiction between maintaining bond strength and enabling complete adhesive removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device exhibits improved heat resistance and easy separation of support layers, ensuring high productivity and efficient semiconductor package preparation with reduced adhesive residue issues, facilitating the use in high-density semiconductor packaging.
Implementation Method 1
a release layer containing a laser-decomposable resin on a support
Implementation Method 2
the second layer is a non-silicone base thermoplastic resin, providing heat resistance and easy separation
Data Source
AI summary
A semiconductor device is provided comprising a support, an adhesive resin layer, an insulating layer, a redistribution layer, a chip layer, and a mold resin layer. The adhesive resin layer consists of a resin layer (A) comprising a photo-decomposable resin containing a fused ring in its main chain and a resin layer (B) comprising a non-silicone base thermoplastic resin and having a storage elastic modulus E' of 1-500 MPa at 25°C and a tensile break strength of 5-50 MPa. The semiconductor device is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.