Adjacent Word Line Voltage Control for 3D Memory HCI
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Solution Overview
Problem
As the integration of three-dimensional semiconductor memory devices increases, the number of word lines connected to one memory block grows, leading to a decrease in program operation speed without a corresponding reduction in reliability during programming operations.
Innovation Solution
A memory device and its operating method, which involve applying specific pre-setup and setup voltages to adjacent word lines perpendicular to the substrate, preventing hot electron injection (HCI) by ensuring the channel corresponding to memory cells connected with the upper adjacent word line remains on and optimizing the program operation speed by adjusting the voltage levels and application times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the number of word lines connected to one memory block is increased to improve integration, then the degree of integration is improved, but the program operation speed decreases
Solution Approach 1:
The patent applies preliminary actions by setting up adjacent word lines with pre-setup voltages before the selected word line programming operation begins. The first adjacent word line is prepared with a first pre-setup voltage and the second adjacent word line with a second pre-setup voltage during a setup period prior to the actual programming, ensuring that when programming occurs, the adjacent lines are already in the correct voltage state to prevent hot electron injection and maintain fast programming speed.
Solution Approach 2:
The patent applies local quality by individually controlling the voltage levels of different adjacent word lines based on their specific positions and roles. The first adjacent word line receives a first pre-setup voltage while the second adjacent word line receives a second pre-setup voltage, with different voltage levels applied to different lines. This localized voltage control optimizes the programming operation for each specific adjacent line while maintaining high integration.
2Device complexity
If adjacent word lines are not properly controlled during programming, then device complexity is reduced, but hot electron injection occurs causing reliability degradation
Solution Approach 1:
The patent prevents hot electron injection by performing preliminary voltage setup on adjacent word lines before the programming operation. During the setup period, the first adjacent word line is configured with a first pre-setup voltage and the second adjacent word line with a second pre-setup voltage, ensuring that when the selected word line is programmed, the adjacent lines are already in the correct state to block hot electron injection without requiring complex real-time control mechanisms.
Solution Approach 2:
The patent applies preliminary anti-action by pre-configuring the adjacent word lines with appropriate voltages that will counteract and prevent the harmful hot electron injection effect. By setting up the first and second pre-setup voltages before programming begins, the system creates a protective voltage state that actively prevents HCI from occurring during the programming operation, thereby maintaining reliability without adding complex control circuitry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents HCI, thereby improving the program operation speed of the selected word line by individually controlling the adjacent word lines, ensuring reliable and efficient programming without channel-off periods.
Implementation Method 1
preventing hot electron injection (HCI) by ensuring the channel corresponding to memory cells connected with the upper adjacent word line remains on
Data Source
AI summary
A memory device includes a memory block including a first adjacent word line, a selected word line, and a second adjacent word line provided in a direction perpendicular to a substrate and an address decoding circuit. In a first setup period in which the selected word line is set up, the address decoding circuit is configured to apply a first pre-setup voltage to the first adjacent word line, apply a first setup voltage that is higher than the first pre-setup voltage to the first adjacent word line, apply a second pre-setup voltage to the second adjacent word line, and apply a second setup voltage that is higher than the second pre-setup voltage to the second adjacent word line. The first pre-setup voltage is higher than the second pre-setup voltage.