Adjustable Epi Isolation Plate for Uniform Gas Deposition
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Solution Overview
Problem
Semiconductor substrates often experience non-uniform material deposition due to existing processing chamber designs, leading to performance issues in manufactured devices.
Innovation Solution
The method involves adjusting the angle and/or height of an isolation plate within the processing chamber to optimize gas flow, using a mechanical actuator and adjustment mechanism to induce angular movement, thereby controlling gas speed and deposition uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a fixed parallel isolation plate is used in the processing chamber, then the chamber structure is simple and easy to manufacture, but the material deposition on the substrate becomes non-uniform in thickness
Solution Approach 1:
The isolation plate is transformed from a fixed component to a dynamic adjustable component. The plate can be moved between parallel and angled orientations relative to the substrate, and its height can be adjusted, allowing the gas flow path to be dynamically modified to achieve uniform material deposition across the substrate surface.
Solution Approach 2:
The angle and height parameters of the isolation plate are made variable. By changing the plate's orientation angle and vertical position, the gas flow characteristics are modified, enabling control over deposition uniformity. This parameter adjustment allows optimization of the processing conditions for different substrate requirements.
2Manufacturing precision
If the isolation plate is adjusted to optimize deposition uniformity, then material thickness uniformity improves, but the device complexity increases due to additional actuators and adjustment mechanisms
Solution Approach 1:
The adjustable isolation plate mechanism serves multiple functions: it controls deposition uniformity, adjusts gas flow patterns, and can potentially accommodate different substrate sizes or shapes. This multi-functionality justifies the added complexity by providing several processing benefits from a single adjustable component.
3Manufacturing precision
If the isolation plate is positioned closer to the substrate to control gas flow, then deposition control improves, but the gas flow resistance increases
Solution Approach 1:
The isolation plate's vertical position is made adjustable, allowing dynamic optimization of the gap between the plate and substrate. This enables finding the optimal balance between gas flow resistance and deposition control for each specific processing requirement, rather than being constrained by a fixed position.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances deposition uniformity, reduces chamber cleaning time, and extends the time between cleaning processes by optimizing gas flow and substrate processing conditions.
Implementation Method 1
using a mechanical actuator and adjustment mechanism to induce angular movement
Implementation Method 2
flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate including guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate
Implementation Method 3
thermally decomposing the process gas to deposit a material from the gas onto the substrate surface
Data Source
AI summary
The present disclosure relates to methods and devices for processing substrates, suitable for use in semiconductor manufacturing. The method includes heating a substrate positioned on a substrate support. The method includes moving an isolation plate adjust one or more of: a height of the isolation plate, or an angle of the isolation plate such that the isolation plate moves to a non-parallel orientation relative to the substrate. The method includes flowing one or more process gases over the substrate to deposit a material on the substrate, the flowing of the one or more process gases over the substrate including guiding the one or more process gases through one or more flow paths defined at least in part by a space between the isolation plate and the substrate.