Integrated Adjustable Gate Resistor for Lower Switching Loss

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Solution Overview

Problem

Semiconductor devices face challenges in reducing switching loss while maintaining a simple configuration, as increasing carrier frequency reduces passive component size but increases switching loss, and high switching speed increases surge voltage, requiring complex configurations with external resistors and measurement circuits.

Innovation Solution

Incorporating a built-in gate resistor with an adjustable resistance value on the semiconductor substrate, connected between the gate electrode and gate pad, allowing for resistance adjustments based on element characteristics to optimize switching speed and reduce switching loss without adding complexity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the carrier frequency is increased to reduce passive component size, then the device size is reduced, but the switching loss increases

Engineering Contradiction:
Improvepassive component sizeVSAvoidswitching loss
Core Design Contradiction:
Volume of moving objectVSLoss of energy

Solution Approach 1:

The gate resistor value is made dynamically adjustable during device operation. A controller selectively connects different resistor values (first gate resistor value and second gate resistor value) based on operating conditions, allowing the gate resistance to be optimized for both high-frequency operation and switching loss reduction, thereby resolving the contradiction between component size reduction and switching loss increase

Inventive Principle:
Principle #15Dynamics

2Loss of energy

If the switching speed is increased to reduce switching loss, then the switching loss is reduced, but the surge voltage increases

Engineering Contradiction:
Improveswitching lossVSAvoidsurge voltage
Core Design Contradiction:
Loss of energyVSObject-affected harmful factors

Solution Approach 1:

The gate resistor value is changed as a controllable parameter to manage the trade-off between switching speed and surge voltage. By selectively applying different gate resistor values, the system can optimize switching performance while keeping surge voltage within acceptable limits, thus resolving the contradiction between reducing switching loss and controlling surge voltage

Inventive Principle:
Principle #35Parameter changes

3Object-affected harmful factors

If an external gate resistor and measurement circuit are added to manage surge voltage, then the surge voltage is controlled, but the device complexity increases

Engineering Contradiction:
Improvesurge voltageVSAvoidconfiguration complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The gate resistor function is merged into the semiconductor device itself rather than being an external component. The controller integrated within the device selectively connects different gate resistor values, eliminating the need for separate external measurement circuits and resistors, thus controlling surge voltage while maintaining a simple configuration

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The adjustable gate resistor enables reduced switching loss with a simplified configuration, managing surge voltage within the semiconductor device's withstand limits, thereby improving efficiency and reducing manufacturing costs.

Implementation Method 1

a gate resistor having an adjustable resistance value... connected between the gate electrode and the gate pad

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Data Source

PatentUS20240038868A1Semiconductor device
Publication Date: 2024.02.01 DENSO CORP
  • US20240038868A1 patent drawing
  • US20240038868A1 patent drawing
  • US20240038868A1 patent drawing

AI summary

A semiconductor element includes an element having a gate electrode provided in a semiconductor substrate. The semiconductor substrate has an emitter electrode arranged on an upper surface and a collector electrode arranged on a lower surface. A gate pad is arranged at a different position from the emitter electrode on the upper surface. A gate resistor arranged on the upper surface has an adjustable resistance value, and is connected between the gate electrode and the gate pad.