Adjustable Internal Voltage Generation Circuit for Semiconductor Memory
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Solution Overview
Problem
Conventional internal voltage generation circuits in semiconductor memory devices experience increased power consumption due to reduced voltage differences between reference voltages, leading to a narrowed dead zone and inefficient operation.
Innovation Solution
An internal voltage generation circuit comprising a reference voltage generator, test signal generator, voltage divider, and selection transmitter, which adjusts resistance values to generate upper and lower limit reference voltages, controlling the dead zone window by setting resistance values using test signals to optimize voltage division and output appropriate reference voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional internal voltage generation circuits use fixed reference voltages to drive internal voltages, then the circuit structure is simple, but the dead zone window is narrowed and power consumption increases due to PVT variations
Solution Approach 1:
The patent applies dynamics by making the reference voltages adjustable rather than fixed. The reference voltage generator dynamically adjusts resistance values based on test signals to generate upper and lower limit reference voltages that adapt to PVT variations, preventing the narrowing of the dead zone window and reducing power consumption while maintaining operational efficiency
2Adaptability or versatility
If the voltage difference between reference voltages is reduced to accommodate PVT variations, then the circuit is more adaptable to process changes, but the dead zone window is narrowed causing increased power consumption
Solution Approach 1:
The patent applies parameter changes by dynamically adjusting resistance values in the reference voltage generator. The test signal generator creates different resistance configurations that modify the reference voltage levels, allowing the circuit to adapt to PVT variations while maintaining an appropriate dead zone window that prevents excessive power consumption
3Reliability
If internal voltage is driven continuously to ensure operation, then the circuit remains operational, but power consumption increases when the internal voltage is not actually needed
Solution Approach 1:
The patent applies feedback through the test signal generator that monitors operational conditions and generates appropriate test signals to control the reference voltages. This feedback mechanism ensures the internal voltage is driven only when necessary based on actual operational requirements, maintaining reliability while minimizing power consumption during unnecessary operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the dead zone window, minimizing power consumption by ensuring the internal voltage is only driven when necessary, thereby optimizing the operation of semiconductor memory devices.
Implementation Method 1
The voltage divider is configured to divide the power supply voltage using the resistance values set by the first and second voltage control test signals
Data Source
AI summary
An internal voltage generation circuit includes a reference voltage generator and an internal voltage generator. The reference voltage generator is configured to adjust resistance values according to test signals and to generate an upper limit reference voltage and a lower limit reference voltage whose levels are determined according to the resistance values. The internal voltage generator is configured to generate an internal voltage which is driven according to the levels of the upper and lower limit reference voltages.