Adjustable Pin Resistance Diode for ESD Protection
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Solution Overview
Problem
Conventional diodes used in semiconductor devices often result in pin resistance that is lower than the specified minimum, due to their smaller resistance and capacitance, which can lead to inadequate electrostatic discharge protection, especially at high speeds.
Innovation Solution
The diode structure is modified by increasing the distance between impurity areas and contact pitches, allowing for adjustable pin resistance by varying the distance between the N-type and P-type impurity areas, as well as the contact pitches, to meet the required resistance specifications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional diode is used for electrostatic discharge protection, then the electrostatic protection function is provided, but the pin resistance becomes lower than the specified minimum
Solution Approach 1:
The patent changes the physical parameters of the diode structure by increasing the distance between the anode and cathode regions, and increasing the contact pitch between metal contacts and semiconductor regions. These parameter modifications directly increase the pin resistance while preserving the electrostatic discharge protection function.
2Object-affected harmful factors
If the distance between anode and cathode is increased, then the pin resistance increases, but the device area increases
Solution Approach 1:
The patent optimizes the spatial arrangement by strategically positioning the anode and cathode regions in specific areas of the semiconductor substrate, utilizing dimensional optimization to achieve increased resistance without proportional area increase.
3Object-affected harmful factors
If the contact pitch is increased, then the pin resistance increases, but the manufacturing precision requirements increase
Solution Approach 1:
The patent establishes specific parameter ranges for contact pitch (e.g., 5-20 micrometers) that balance the need for increased pin resistance with manufacturability. These optimized parameter ranges ensure that resistance specifications are met while remaining within standard manufacturing capabilities.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This adjustment significantly increases the pin resistance of semiconductor products, ensuring compliance with specified resistance levels while minimizing the impact on capacitance, thereby enhancing electrostatic discharge protection.
Implementation Method 1
at least one N-type impurity doping area formed in the P-type well, an isolation area formed to surround the N-type impurity doping area, a P-type impurity doping area formed to surround the isolation area
Implementation Method 2
The first electrostatic discharge section 110 includes a P-type well 111 formed in the surface of a P-type semiconductor substrate, one or a plurality of N+ impurity areas 112 formed in the surface of the substrate within the P-type well 111
Data Source
AI summary
A diode comprises a P-type well formed in a semiconductor substrate, at least one N-type impurity doping area formed in the P-type well, an isolation area formed to surround the N-type impurity doping area, a P-type impurity doping area formed to surround the isolation area, first contacts formed in the N-type impurity doping area in a single row or a plurality of rows, and second contacts formed in the P-type impurity doping area in a single row or a plurality of rows, wherein pin resistance can be adjusted through changing any one of a distance between the N-type impurity doping area and the P-type impurity doping area, a contact pitch between the first contacts, and a contact pitch between the second contacts.