Adjustable Secondary Magnet Arrangement for Sputtering Target Utilization
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Solution Overview
Problem
In magnetron sputtering processes, target utilization and coating thickness uniformity are challenging due to target erosion drifts and plasma density variations, leading to inefficiencies and the need for frequent process corrections, which disrupt stability and reproducibility.
Innovation Solution
A magnetron sputtering source with a primary magnet arrangement and an adjustable secondary magnet arrangement, generating an auxiliary magnetic field that superposes with the primary field to enhance target utilization and plasma density distribution, allowing for precise adjustments to achieve uniform coating thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If a standard magnetron sputtering source is used, then the coating process can be maintained, but target utilization is low and coating thickness uniformity deteriorates due to target erosion drifts
Solution Approach 1:
The patent applies the dynamics principle by making the secondary magnet arrangement adjustable during the sputtering process. The secondary magnets can be moved along the target surface to dynamically compensate for target erosion drifts, maintaining optimal magnetic field configuration throughout the target lifetime. This dynamic adjustment enables both high target utilization and consistent coating thickness uniformity.
Solution Approach 2:
The patent implements parameter changes by varying the position and configuration of the secondary magnet arrangement to optimize the magnetic field distribution. By adjusting the secondary magnets' positions, the magnetic field parameters are changed to compensate for target erosion, thereby maintaining both high target utilization and uniform coating thickness throughout the process.
2Loss of substance
If the secondary magnet arrangement is fixed, then the device structure is simple, but target utilization is limited and frequent process corrections are needed
Solution Approach 1:
The patent resolves this contradiction by introducing adjustability to the secondary magnet arrangement. The secondary magnets can be repositioned along the target surface, transforming a static structure into a dynamic one. This enables improved target utilization through optimized magnetic field configuration while maintaining relatively simple device architecture through modular, movable components.
3Manufacturing precision
If aperture corrections or geometrical corrections are applied, then coating thickness uniformity can be corrected, but process stability and reproducibility deteriorate due to chamber interruptions
Solution Approach 1:
The patent applies preliminary action by pre-configuring the adjustable secondary magnet arrangement to compensate for expected target erosion drifts. Instead of correcting coating thickness issues after they occur (which requires chamber interruptions), the magnetic field configuration is proactively adjusted during the sputtering process to prevent thickness uniformity deviations, thereby maintaining process stability and reproducibility.
4Manufacturing precision
If the primary magnet arrangement is used alone, then the device structure is simple, but plasma density distribution is suboptimal and coating thickness uniformity is poor
Solution Approach 1:
The patent implements segmentation by dividing the magnet arrangement into two independent parts: a fixed primary magnet arrangement and an adjustable secondary magnet arrangement. The primary magnets provide the base magnetic field configuration, while the secondary magnets are segmented and can be independently positioned to optimize plasma density distribution and coating thickness uniformity without requiring complete redesign of the entire magnet system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases target utilization, maintains high sputtering efficiency, and achieves uniform coating thickness distributions with reduced need for process corrections, enhancing productivity and stability.
Implementation Method 1
a primary magnet arrangement for generating close to said sputtering surface a magnetron magnetic field describing one tunnel-like closed loop having an arc-shaped cross-section
Implementation Method 2
a secondary magnet arrangement for generating close to said sputtering surface an auxiliary magnetic field having a substantially arc-shaped cross-section, said auxiliary magnetic field superposing with said magnetron magnetic field
Implementation Method 3
The plasma discharge is maintained in an evacuated vacuum chamber (process chamber) under controlled inlet of a working gas (inert gas) with an electric potential and a discharge current applied by a power supply between target cathode and an anode
Implementation Method 4
Sputter coating technology is applied for producing thin films... magnetron sputtering sources, more precisely magnetron cathode sputtering sources, are widely used
Data Source
AI summary
The magnetron sputtering source comprises a target mount for mounting a target arrangement comprising a sputtering target having a sputtering surface; a primary magnet arrangement for generating close to said sputtering surface a magnetron magnetic field describing one tunnel-like closed loop having an arc-shaped cross-section; a secondary magnet arrangement for generating close to said sputtering surface an auxiliary magnetic field having a substantially arc-shaped cross-section, said auxiliary magnetic field superposing with said magnetron magnetic field and being substantially inversely polarized with respect to said magnetron magnetic field; and an adjustment unit for adjusting said auxiliary magnetic field. The vacuum treatment apparatus comprises such a magnetron sputtering source. The method for manufacturing coated substrates by magnetron sputtering using a magnetron sputtering source comprises the steps of a) generating close to a sputtering surface of a target said magnetron magnetic field; b) generating close to said sputtering surface said auxiliary magnetic field; and c) adjusting said auxiliary magnetic field. In particular, said secondary magnet arrangement comprises several separately adjustable segments. Using the invention, it is possible to determine gauge functions for precisely achieving target thickness distributions.