Adjustable Shadowing Unit for Bevel Etching Plasma Control

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in achieving precise process control during bevel etching, leading to defects in integrated circuit fabrication.

Innovation Solution

A plasma processing apparatus is designed with a lower and upper plasma exclusion zone (PEZ) ring system, combined with a shadowing unit that can be adjusted to customize the plasma exclusion zone, allowing for precise control of the plasma exposure during bevel etching, thereby reducing defects.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a fixed upper sheltering module is used, then the plasma exclusion zone is stable, but it cannot be adjusted for wafers with different features, reducing adaptability

Engineering Contradiction:
Improveadaptability to different wafer featuresVSAvoidcomplexity of adjustable mechanism
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The upper sheltering module is segmented into a base structure and a detachable shadowing unit. The shadowing unit can be independently attached or removed from the base structure, allowing the plasma exclusion zone to be customized for different wafer features without redesigning the entire module.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The system transitions from a fixed sheltering module to a dynamic configuration where the shadowing unit can be selectively positioned. This allows the plasma exclusion zone to be adjusted dynamically based on the specific requirements of different wafers being processed.

Inventive Principle:
Principle #15Dynamics

2Manufacturing precision

If the upper sheltering module is replaced for different wafer features, then processing precision is maintained, but manufacturing time and costs increase

Engineering Contradiction:
Improveprecision of plasma exposure controlVSAvoidtime for module replacement
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

Multiple shadowing units with different configurations are prepared in advance and can be quickly swapped onto the base structure. This preliminary preparation allows rapid adjustment without time-consuming module replacements, maintaining processing precision while reducing downtime.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The base structure is designed as a universal platform that can accommodate various shadowing units. This multi-functionality allows a single module to handle different wafer features by simply changing the shadowing unit, eliminating the need for multiple specialized modules and their associated replacement times.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Reliability

If plasma exposure is not precisely controlled, then processing is simpler, but defects increase in integrated circuit fabrication

Engineering Contradiction:
Improvedefect reduction in IC fabricationVSAvoidcomplexity of plasma exposure control system
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The shadowing unit acts as an intermediary element between the plasma source and the wafer. It precisely controls the plasma exposure by blocking specific regions, thereby reducing defects in IC fabrication without requiring complex plasma generation or control systems.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus effectively minimizes defects by allowing for tailored plasma exposure, extending the lifespan of the upper sheltering module and reducing manufacturing costs through efficient processing of wafers with different features without the need for module replacement.

Implementation Method 1

a plasma generation module used to generate plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS10879051B2Method for controlling exposure region in bevel etching process for semiconductor fabrication
Publication Date: 2020.12.29 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10879051B2 patent drawing
  • US10879051B2 patent drawing
  • US10879051B2 patent drawing

AI summary

A plasma processing apparatus is provided. The apparatus includes a lower sheltering module. The apparatus further includes an upper sheltering module arranged adjacent to the lower sheltering module. The apparatus includes an upper plate and an upper PEZ ring positioned around the upper plate. The apparatus also includes a shadowing unit that includes a number of engaging parts in the form of arcs detachably positioned on the upper PEZ ring. In addition, the apparatus includes a plasma generation module for generating plasma in the peripheral region of the lower sheltering module and the upper sheltering module.