Adsorption-Promoting Layer for Reliable Barrier Metal Formation
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Solution Overview
Problem
In semiconductor devices, the proximity of films with different metal elements, such as aluminum oxide and titanium nitride, can lead to adverse interactions, affecting the integrity and performance of the device.
Innovation Solution
The implementation of an adsorption promoting layer with a specific composition and thickness between the insulating film and the electrode layer, which enhances the adsorption of source gases during the formation of the barrier metal layer, thereby improving the formation process and reducing defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If films containing different metal elements (aluminum oxide film and titanium nitride film) are disposed near each other, then device functionality is achieved, but adverse interactions occur between the films affecting device reliability
Solution Approach 1:
An adsorption promoting layer is introduced as an intermediary between the aluminum oxide insulating film and the titanium nitride barrier metal layer. This intermediate layer prevents direct adverse interactions between the two films while enabling their coexistence in close proximity, thus maintaining device functionality while improving reliability by eliminating harmful film-film interactions.
2Ease of manufacture
If barrier metal layer is formed directly on insulating film, then manufacturing process is simplified, but formation quality is insufficient leading to defects
Solution Approach 1:
The adsorption promoting layer serves as a mediator that improves the formation quality of the barrier metal layer. By providing enhanced adsorption properties, it enables better nucleation and growth of the titanium nitride layer during deposition, resulting in a more continuous and defect-free barrier metal layer without significantly complicating the manufacturing process.
Solution Approach 2:
The adsorption promoting layer is formed in advance before the barrier metal layer deposition. This preliminary action prepares the surface with optimal adsorption characteristics, ensuring that when the barrier metal layer is subsequently deposited, it forms with high quality and continuity, thus improving manufacturing precision before the actual barrier layer formation occurs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively promotes the formation of a continuous and reliable barrier metal layer, enhancing the reliability and performance of the semiconductor device by reducing leakage current and improving electric field handling during operations.
Implementation Method 1
an adsorption promoting layer with a specific composition and thickness between the insulating film and the electrode layer, which enhances the adsorption of source gases during the formation of the barrier metal layer
Data Source
AI summary
A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.