AEM Patterns for Plasma Density Control in HDP-CVD

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Solution Overview

Problem

The high density plasma (HDP) chemical vapor deposition (CVD) process faces challenges in achieving uniformity at smaller technology nodes, leading to process window limitations and increased downtime and part costs due to trial and error adjustments.

Innovation Solution

The use of anti-electromagnetic (AEM) patterns on the chamber surfaces to control voltage drops caused by non-uniform electromagnetic fields, ensuring a more uniform plasma distribution and deposition by varying the capacitance in specific areas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If trial and error adjustment of nozzles is performed to control deposition, then deposition uniformity may be improved, but tool downtime increases and parts wear out faster

Engineering Contradiction:
Improvedeposition uniformityVSAvoidtool downtime
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent replaces mechanical adjustment of nozzles with electromagnetic field control through AEM patterns on the chamber dome. Instead of physically moving or adjusting nozzle positions, the system uses electromagnetic patterns to control plasma distribution and achieve uniform deposition, eliminating the need for mechanical intervention and reducing tool downtime.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces AEM (anti-electromagnetic) patterns as an intermediary between the electromagnetic field and the plasma. These patterns act as a mediator that shapes and controls the electromagnetic field distribution within the chamber, thereby controlling plasma uniformity without direct mechanical adjustment of the deposition system components.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If trial and error adjustment of nozzles is performed to control deposition, then deposition uniformity may be improved, but parts useful life decreases

Engineering Contradiction:
Improvedeposition uniformityVSAvoidparts useful life
Core Design Contradiction:
Manufacturing precisionVSDuration of action of stationary object

Solution Approach 1:

The patent replaces mechanical adjustment of nozzles with electromagnetic field control through AEM patterns on the chamber dome. Instead of physically moving or adjusting nozzle positions, the system uses electromagnetic patterns to control plasma distribution and achieve uniform deposition, eliminating the need for mechanical intervention and reducing tool downtime.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces AEM (anti-electromagnetic) patterns as an intermediary between the electromagnetic field and the plasma. These patterns act as a mediator that shapes and controls the electromagnetic field distribution within the chamber, thereby controlling plasma uniformity without direct mechanical adjustment of the deposition system components.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If tool is opened for nozzle adjustment, then deposition uniformity may be improved, but contamination risk increases

Engineering Contradiction:
Improvedeposition uniformityVSAvoidcontamination
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent replaces mechanical adjustment of nozzles with electromagnetic field control through AEM patterns on the chamber dome. Instead of physically moving or adjusting nozzle positions, the system uses electromagnetic patterns to control plasma distribution and achieve uniform deposition, eliminating the need for mechanical intervention and reducing tool downtime.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

4Quantity of substance

If HDP-CVD process is used for small technology nodes, then integration density may be improved, but deposition uniformity deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoiddeposition uniformity
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent applies AEM patterns with specific electromagnetic properties at different locations on the chamber dome to create localized electromagnetic field modifications. This allows different regions of the chamber to have optimized plasma distribution tailored to the specific requirements of small technology node processing, achieving both high integration density and uniform deposition.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent modifies the electromagnetic field parameters within the chamber by introducing AEM patterns with specific permittivity and permeability characteristics. These parameter changes in the electromagnetic field lead to improved plasma distribution and deposition uniformity, enabling successful HDP-CVD processing at smaller technology nodes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances plasma uniformity, reduces downtime, and extends the useful life of chamber components, allowing for more efficient processing and increased integration density in semiconductor fabrication.

Implementation Method 1

providing a material on a surface of the chamber corresponding to the non-uniformity... varying the capacitance in specific areas

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

control voltage drops caused by non-uniform electromagnetic fields

Methodology Applied
Scientific EffectElectromagnetic field: Electromagnetic Induction

Implementation Method 3

The forming of the component includes using a plasma

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 4

high density plasma (HDP) chemical vapor deposition (CVD) process

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS8889435B2Plasma density control
Publication Date: 2014.11.18 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US8889435B2 patent drawing
  • US8889435B2 patent drawing
  • US8889435B2 patent drawing

AI summary

A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.